AIHD06N60RFATMA1
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- Mfr.Part #
- AIHD06N60RFATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- IC DISCRETE 600V TO252-3
- Stock
- 20,901
- In Stock ：
- 20,901
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Current - Collector Pulsed (Icm) :
- 18A
- Mounting Type :
- Surface Mount
- IGBT Type :
- Trench Field Stop
- ECCN Code :
- EAR99
- Input Type :
- Standard
- Power - Max :
- 100W
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Td (on/off) @ 25°C :
- 8ns/105ns
- Vce(on) (Max) @ Vge, Ic :
- 2.5V @ 15V, 6A
- Published :
- 2012
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Factory Lead Time :
- 39 Weeks
- Packaging :
- Tape and Reel (TR)
- Test Condition :
- 400V, 6A, 23 Ω, 15V
- Operating Temperature :
- -40°C~175°C TJ
- Current - Collector (Ic) (Max) :
- 12A
- RoHS Status :
- ROHS3 Compliant
- Switching Energy :
- 90μJ (on), 90μJ (off)
- Voltage - Collector Emitter Breakdown (Max) :
- 600V
- Gate Charge :
- 48nC
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Datasheets
- AIHD06N60RFATMA1
AIHD06N60RFATMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
AIHD06N60RFATMA1 Description
IGBT in packages with integrated diode offers benefit of space saving
AIHD06N60RFATMA1 Features
?Eon, Eoff, and Qrr were optimized for minimal switching losses.
?Application range: 4 to 30 kHz
?Low EMI levels are produced by smooth switching performance.
?Extremely narrow parameter range
?175°C is the maximum junction temperature
?dynamic stress testing
?5 ps of short-circuit capacity
?Best in class current performance when compared to package size.
AIHD06N60RFATMA1 Applications
?Miniature drives
?Injection of piezo
?HID and automotive illumination
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