AIHD04N60RFATMA1
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- Mfr.Part #
- AIHD04N60RFATMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- IC DISCRETE 600V TO252-3
- Stock
- 43,048
- In Stock ：
- 43,048
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Switching Energy :
- 60μJ (on), 50μJ (off)
- Published :
- 2012
- Gate Charge :
- 27nC
- Voltage - Collector Emitter Breakdown (Max) :
- 600V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Test Condition :
- 400V, 4A, 43 Ω, 15V
- IGBT Type :
- Trench Field Stop
- Current - Collector Pulsed (Icm) :
- 12A
- Input Type :
- Standard
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -40°C~175°C TJ
- Current - Collector (Ic) (Max) :
- 8A
- Vce(on) (Max) @ Vge, Ic :
- 2.5V @ 15V, 4A
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 39 Weeks
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Power - Max :
- 75W
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Td (on/off) @ 25°C :
- 12ns/116ns
- Packaging :
- Tape and Reel (TR)
- Datasheets
- AIHD04N60RFATMA1
AIHD04N60RFATMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
AIHD04N60RFATMA1 Description
AIHD04N60RFATMA1 transistor is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes AIHD04N60RFATMA1 MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies AIHD04N60RFATMA1 has the common source configuration.
AIHD04N60RFATMA1 Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging
AIHD04N60RFATMA1 Applications
ISM applications
DC large signal applications
Power factor correction
Electronic lamp ballasts
Flat panel display
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