50C02SS-TL-E
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- Mfr.Part #
- 50C02SS-TL-E
- Manufacturer
- onsemi
- Package / Case
- 3-SMD, Flat Lead
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.4A 3SSFP
- Stock
- 3,316
- In Stock ：
- 3,316
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Max Collector Current :
- 400mA
- Collector Emitter Voltage (VCEO) :
- 100mV
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- Element Configuration :
- Single
- Max Power Dissipation :
- 200mW
- Length :
- 1.4mm
- Contact Plating :
- Tin
- Width :
- 800μm
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Package / Case :
- 3-SMD, Flat Lead
- hFE Min :
- 300
- Published :
- 2012
- Pbfree Code :
- yes
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Frequency - Transition :
- 500MHz
- Lead Free :
- Lead Free
- Factory Lead Time :
- 2 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 10mA 2V
- Packaging :
- Tape and Reel (TR)
- Max Frequency :
- 1MHz
- Height :
- 600μm
- Vce Saturation (Max) @ Ib, Ic :
- 100mV @ 10mA, 100mA
- Collector Emitter Breakdown Voltage :
- 50V
- JESD-609 Code :
- e6
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Base Voltage (VCBO) :
- 60V
- Collector Emitter Saturation Voltage :
- 100mV
- Datasheets
- 50C02SS-TL-E
50C02SS-TL-E Documents
NPN 150°C TJ 100nA ICBO 3-SMD, Flat Lead Tape & Reel (TR) Surface Mount
50C02SS-TL-E Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 300 @ 10mA 2V DC current gain.As it features a collector emitter saturation voltage of 100mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.When collector current reaches its maximum, it can reach 400mA volts.
50C02SS-TL-E Features
the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 100mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
50C02SS-TL-E Applications
There are a lot of ON Semiconductor
50C02SS-TL-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| 50C02CH-TL-E | onsemi | 1,578 | TRANS NPN 50V 0.5A 3CPH |
| 50C02MH-TL-E | onsemi | 8,802 | TRANS NPN 50V 0.5A 3MCPH |
| 50C02SP-AC | onsemi | 12,500 | BIP NPN 0.5A 50V |
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