50C02SS-TL-E
- Mfr.Part #
- 50C02SS-TL-E
- Manufacturer
- onsemi
- Package / Case
- 3-SMD, Flat Lead
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.4A 3SSFP
- Stock
- 3,316
- In Stock :
- 3,316
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Max Collector Current :
- 400mA
- Collector Base Voltage (VCBO) :
- 60V
- Pbfree Code :
- yes
- Max Frequency :
- 1MHz
- Factory Lead Time :
- 2 Weeks
- Collector Emitter Saturation Voltage :
- 100mV
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 50V
- Collector Emitter Voltage (VCEO) :
- 100mV
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- hFE Min :
- 300
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 10mA 2V
- Package / Case :
- 3-SMD, Flat Lead
- Emitter Base Voltage (VEBO) :
- 5V
- Published :
- 2012
- Vce Saturation (Max) @ Ib, Ic :
- 100mV @ 10mA, 100mA
- Width :
- 800μm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 200mW
- Element Configuration :
- Single
- Frequency - Transition :
- 500MHz
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e6
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Operating Temperature :
- 150°C TJ
- Contact Plating :
- Tin
- Height :
- 600μm
- Length :
- 1.4mm
- Datasheets
- 50C02SS-TL-E

NPN 150°C TJ 100nA ICBO 3-SMD, Flat Lead Tape & Reel (TR) Surface Mount
50C02SS-TL-E Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 300 @ 10mA 2V DC current gain.As it features a collector emitter saturation voltage of 100mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.When collector current reaches its maximum, it can reach 400mA volts.
50C02SS-TL-E Features
the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 100mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
50C02SS-TL-E Applications
There are a lot of ON Semiconductor
50C02SS-TL-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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