50C02SS-TL-E

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Mfr.Part #
50C02SS-TL-E
Manufacturer
onsemi
Package / Case
3-SMD, Flat Lead
Datasheet
Download
Description
TRANS NPN 50V 0.4A 3SSFP
Stock
3,316
In Stock :
3,316

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Number of Pins :
3
Max Collector Current :
400mA
Collector Base Voltage (VCBO) :
60V
Pbfree Code :
yes
Max Frequency :
1MHz
Factory Lead Time :
2 Weeks
Collector Emitter Saturation Voltage :
100mV
Mounting Type :
Surface Mount
Collector Emitter Breakdown Voltage :
50V
Collector Emitter Voltage (VCEO) :
100mV
Lead Free :
Lead Free
Current - Collector Cutoff (Max) :
100nA ICBO
hFE Min :
300
DC Current Gain (hFE) (Min) @ Ic, Vce :
300 @ 10mA 2V
Package / Case :
3-SMD, Flat Lead
Emitter Base Voltage (VEBO) :
5V
Published :
2012
Vce Saturation (Max) @ Ib, Ic :
100mV @ 10mA, 100mA
Width :
800μm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Transistor Type :
NPN
ECCN Code :
EAR99
Max Power Dissipation :
200mW
Element Configuration :
Single
Frequency - Transition :
500MHz
Packaging :
Tape and Reel (TR)
JESD-609 Code :
e6
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
RoHS Status :
ROHS3 Compliant
Pin Count :
3
Operating Temperature :
150°C TJ
Contact Plating :
Tin
Height :
600μm
Length :
1.4mm
Datasheets
50C02SS-TL-E
Introducing Transistors - Bipolar (BJT) - Single onsemi 50C02SS-TL-E from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Surface Mount, Package / Case:3-SMD, Flat Lead, Operating Temperature:150°C TJ, 50C02SS-TL-E pinout, 50C02SS-TL-E datasheet PDF, 50C02SS-TL-E amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 50C02SS-TL-E ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 50C02SS-TL-E


NPN 150°C TJ 100nA ICBO 3-SMD, Flat Lead Tape & Reel (TR) Surface Mount

50C02SS-TL-E Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 300 @ 10mA 2V DC current gain.As it features a collector emitter saturation voltage of 100mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.When collector current reaches its maximum, it can reach 400mA volts.

50C02SS-TL-E Features


the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 100mV @ 10mA, 100mA
the emitter base voltage is kept at 5V


50C02SS-TL-E Applications


There are a lot of ON Semiconductor
50C02SS-TL-E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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