50C02CH-TL-E

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Mfr.Part #
50C02CH-TL-E
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS NPN 50V 0.5A 3CPH
Stock
1,578
In Stock :
1,578

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Mounting Type :
Surface Mount
Collector Emitter Saturation Voltage :
100mV
Pin Count :
3
Height :
900μm
ECCN Code :
EAR99
Frequency :
500MHz
Published :
2003
REACH SVHC :
Unknown
Gain Bandwidth Product :
500MHz
Width :
1.6mm
hFE Min :
300
Terminal Finish :
Tin/Bismuth (Sn/Bi)
Power Dissipation :
700mW
Number of Elements :
1
Collector Emitter Breakdown Voltage :
50V
DC Current Gain (hFE) (Min) @ Ic, Vce :
300 @ 10mA 2V
Package / Case :
TO-236-3, SC-59, SOT-23-3
Transistor Type :
NPN
Max Breakdown Voltage :
50V
Operating Temperature :
150°C TJ
Vce Saturation (Max) @ Ib, Ic :
100mV @ 10mA, 100mA
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Power Dissipation :
700mW
Lead Free :
Lead Free
Collector Emitter Voltage (VCEO) :
50V
Emitter Base Voltage (VEBO) :
5V
RoHS Status :
ROHS3 Compliant
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Current - Collector Cutoff (Max) :
100nA ICBO
Pbfree Code :
yes
Surface Mount :
yes
Packaging :
Tape and Reel (TR)
JESD-609 Code :
e6
Max Collector Current :
500mA
Number of Pins :
3
Polarity/Channel Type :
NPN
Collector Base Voltage (VCBO) :
60V
Element Configuration :
Single
Radiation Hardening :
No
Factory Lead Time :
5 Weeks
Length :
2.9mm
Datasheets
50C02CH-TL-E
Introducing Transistors - Bipolar (BJT) - Single onsemi 50C02CH-TL-E from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Package / Case:TO-236-3, SC-59, SOT-23-3, Operating Temperature:150°C TJ, Number of Pins:3, 50C02CH-TL-E pinout, 50C02CH-TL-E datasheet PDF, 50C02CH-TL-E amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 50C02CH-TL-E ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 50C02CH-TL-E


NPN 150°C TJ 100nA ICBO 1 Elements NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

50C02CH-TL-E Overview


In this device, the DC current gain is 300 @ 10mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 100mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 100mV @ 10mA, 100mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.An input voltage of 50V volts is the breakdown voltage.Maximum collector currents can be below 500mA volts.

50C02CH-TL-E Features


the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 100mV @ 10mA, 100mA
the emitter base voltage is kept at 5V


50C02CH-TL-E Applications


There are a lot of ON Semiconductor
50C02CH-TL-E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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