50C02CH-TL-E
- Mfr.Part #
- 50C02CH-TL-E
- Manufacturer
- onsemi
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.5A 3CPH
- Stock
- 1,578
- In Stock :
- 1,578
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Collector Emitter Saturation Voltage :
- 100mV
- Pin Count :
- 3
- Height :
- 900μm
- ECCN Code :
- EAR99
- Frequency :
- 500MHz
- Published :
- 2003
- REACH SVHC :
- Unknown
- Gain Bandwidth Product :
- 500MHz
- Width :
- 1.6mm
- hFE Min :
- 300
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Power Dissipation :
- 700mW
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 10mA 2V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Transistor Type :
- NPN
- Max Breakdown Voltage :
- 50V
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 100mV @ 10mA, 100mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 700mW
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 50V
- Emitter Base Voltage (VEBO) :
- 5V
- RoHS Status :
- ROHS3 Compliant
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Pbfree Code :
- yes
- Surface Mount :
- yes
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e6
- Max Collector Current :
- 500mA
- Number of Pins :
- 3
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 60V
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Factory Lead Time :
- 5 Weeks
- Length :
- 2.9mm
- Datasheets
- 50C02CH-TL-E

NPN 150°C TJ 100nA ICBO 1 Elements NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
50C02CH-TL-E Overview
In this device, the DC current gain is 300 @ 10mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 100mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 100mV @ 10mA, 100mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.An input voltage of 50V volts is the breakdown voltage.Maximum collector currents can be below 500mA volts.
50C02CH-TL-E Features
the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 100mV @ 10mA, 100mA
the emitter base voltage is kept at 5V
50C02CH-TL-E Applications
There are a lot of ON Semiconductor
50C02CH-TL-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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