50C02CH-TL-E

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Mfr.Part #
50C02CH-TL-E
Manufacturer
onsemi
Package / Case
TO-236-3, SC-59, SOT-23-3
Datasheet
Download
Description
TRANS NPN 50V 0.5A 3CPH
Stock
1,578
In Stock :
1,578

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Gain Bandwidth Product :
500MHz
Element Configuration :
Single
Factory Lead Time :
5 Weeks
Max Power Dissipation :
700mW
Terminal Finish :
Tin/Bismuth (Sn/Bi)
Radiation Hardening :
No
ECCN Code :
EAR99
JESD-609 Code :
e6
Published :
2003
Collector Emitter Voltage (VCEO) :
50V
Number of Elements :
1
Max Breakdown Voltage :
50V
Lead Free :
Lead Free
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Emitter Base Voltage (VEBO) :
5V
Transistor Type :
NPN
Surface Mount :
yes
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Width :
1.6mm
Packaging :
Tape and Reel (TR)
Power Dissipation :
700mW
Operating Temperature :
150°C TJ
Current - Collector Cutoff (Max) :
100nA ICBO
Mounting Type :
Surface Mount
Collector Emitter Breakdown Voltage :
50V
Number of Pins :
3
Length :
2.9mm
Height :
900μm
REACH SVHC :
Unknown
DC Current Gain (hFE) (Min) @ Ic, Vce :
300 @ 10mA 2V
Polarity/Channel Type :
NPN
Collector Emitter Saturation Voltage :
100mV
hFE Min :
300
Package / Case :
TO-236-3, SC-59, SOT-23-3
Pbfree Code :
yes
Collector Base Voltage (VCBO) :
60V
RoHS Status :
ROHS3 Compliant
Max Collector Current :
500mA
Pin Count :
3
Frequency :
500MHz
Vce Saturation (Max) @ Ib, Ic :
100mV @ 10mA, 100mA
Introducing Transistors - Bipolar (BJT) - Single onsemi 50C02CH-TL-E from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Mounting Type:Surface Mount, Number of Pins:3, Package / Case:TO-236-3, SC-59, SOT-23-3, 50C02CH-TL-E pinout, 50C02CH-TL-E datasheet PDF, 50C02CH-TL-E amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 50C02CH-TL-E ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 50C02CH-TL-E


NPN 150°C TJ 100nA ICBO 1 Elements NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount

50C02CH-TL-E Overview


In this device, the DC current gain is 300 @ 10mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 100mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 100mV @ 10mA, 100mA.Keeping the emitter base voltage at 5V allows for a high level of efficiency.An input voltage of 50V volts is the breakdown voltage.Maximum collector currents can be below 500mA volts.

50C02CH-TL-E Features


the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of 100mV
the vce saturation(Max) is 100mV @ 10mA, 100mA
the emitter base voltage is kept at 5V


50C02CH-TL-E Applications


There are a lot of ON Semiconductor
50C02CH-TL-E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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