30A02MH-TL-E

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Mfr.Part #
30A02MH-TL-E
Manufacturer
onsemi
Package / Case
3-SMD, Flat Lead
Datasheet
Download
Description
TRANS PNP 30V 0.7A 3MCPH
Stock
3,207
In Stock :
3,207

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Emitter Voltage (VCEO) :
-220mV
Contact Plating :
Tin
JESD-609 Code :
e6
Max Power Dissipation :
600mW
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Max Collector Current :
700mA
Lead Free :
Lead Free
Transistor Type :
PNP
RoHS Status :
ROHS3 Compliant
Number of Pins :
3
ECCN Code :
EAR99
Collector Emitter Breakdown Voltage :
30V
Vce Saturation (Max) @ Ib, Ic :
220mV @ 10mA, 200mA
Collector Base Voltage (VCBO) :
30V
Mounting Type :
Surface Mount
Current - Collector Cutoff (Max) :
100nA ICBO
Factory Lead Time :
7 Weeks
hFE Min :
200
Emitter Base Voltage (VEBO) :
5V
Pin Count :
3
Pbfree Code :
yes
DC Current Gain (hFE) (Min) @ Ic, Vce :
200 @ 10mA 2V
Published :
2009
Operating Temperature :
150°C TJ
Packaging :
Tape and Reel (TR)
Frequency - Transition :
520MHz
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power - Max :
600mW
Package / Case :
3-SMD, Flat Lead
Datasheets
30A02MH-TL-E
Introducing Transistors - Bipolar (BJT) - Single onsemi 30A02MH-TL-E from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Surface Mount, Operating Temperature:150°C TJ, Package / Case:3-SMD, Flat Lead, 30A02MH-TL-E pinout, 30A02MH-TL-E datasheet PDF, 30A02MH-TL-E amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 30A02MH-TL-E ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 30A02MH-TL-E


PNP 150°C TJ 100nA ICBO 3-SMD, Flat Lead Tape & Reel (TR) Surface Mount

30A02MH-TL-E Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 10mA 2V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.When collector current reaches its maximum, it can reach 700mA volts.

30A02MH-TL-E Features


the DC current gain for this device is 200 @ 10mA 2V
the vce saturation(Max) is 220mV @ 10mA, 200mA
the emitter base voltage is kept at 5V


30A02MH-TL-E Applications


There are a lot of ON Semiconductor
30A02MH-TL-E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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