30A02CH-TL-E
- Mfr.Part #
- 30A02CH-TL-E
- Manufacturer
- onsemi
- Package / Case
- SC-96
- Datasheet
- Download
- Description
- TRANS PNP 30V 0.7A 3CPH
- Stock
- 15,518
- In Stock :
- 15,518
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 30V
- Number of Elements :
- 1
- Package / Case :
- SC-96
- Factory Lead Time :
- 5 Weeks
- Element Configuration :
- Single
- Width :
- 1.6mm
- Length :
- 2.9mm
- Emitter Base Voltage (VEBO) :
- 5V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 10mA 2V
- Operating Temperature :
- 150°C TJ
- JESD-609 Code :
- e6
- Number of Terminations :
- 3
- Surface Mount :
- yes
- Polarity/Channel Type :
- PNP
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Application :
- SWITCHING
- Max Frequency :
- 520MHz
- Max Power Dissipation :
- 700mW
- Collector Emitter Saturation Voltage :
- -220mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 700mA
- Collector Emitter Breakdown Voltage :
- 30V
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 3
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Terminal Position :
- Dual
- Pin Count :
- 3
- Frequency - Transition :
- 520MHz
- ECCN Code :
- EAR99
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Published :
- 2003
- Collector Emitter Voltage (VCEO) :
- 30V
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 700mW
- Vce Saturation (Max) @ Ib, Ic :
- 220mV @ 10mA, 200mA
- Transition Frequency :
- 520MHz
- Height :
- 900μm
- Lead Free :
- Lead Free
- Transistor Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- 30A02CH-TL-E

PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP SC-96 Tape & Reel (TR) Surface Mount
30A02CH-TL-E Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 10mA 2V.The collector emitter saturation voltage is -220mV, which allows for maximum design flexibility.When VCE saturation is 220mV @ 10mA, 200mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 5V can achieve high levels of efficiency.In the part, the transition frequency is 520MHz.A maximum collector current of 700mA volts can be achieved.
30A02CH-TL-E Features
the DC current gain for this device is 200 @ 10mA 2V
a collector emitter saturation voltage of -220mV
the vce saturation(Max) is 220mV @ 10mA, 200mA
the emitter base voltage is kept at 5V
a transition frequency of 520MHz
30A02CH-TL-E Applications
There are a lot of ON Semiconductor
30A02CH-TL-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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