2STN2540
- Mfr.Part #
- 2STN2540
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 40V 5A SOT223
- Stock
- 4,957
- In Stock :
- 4,957
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 40V
- Case Connection :
- COLLECTOR
- Package / Case :
- TO-261-4, TO-261AA
- hFE Min :
- 50
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Vce Saturation (Max) @ Ib, Ic :
- 450mV @ 500mA, 5A
- Base Part Number :
- 2STN
- Collector Emitter Saturation Voltage :
- 450mV
- Factory Lead Time :
- 8 Weeks
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Polarity/Channel Type :
- PNP
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 3.3mm
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Base Voltage (VCBO) :
- 40V
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Position :
- Dual
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Number of Terminations :
- 4
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Height :
- 1.8mm
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 2A 2V
- Transistor Element Material :
- SILICON
- Pin Count :
- 4
- Power Dissipation :
- 1.6W
- Max Power Dissipation :
- 1.6W
- JESD-30 Code :
- R-PDSO-G4
- Operating Temperature :
- 150°C TJ
- REACH SVHC :
- No SVHC
- Transistor Type :
- PNP
- Terminal Finish :
- MATTE TIN
- Max Breakdown Voltage :
- 40V
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 5A
- Lead Free :
- Lead Free
- Terminal Form :
- Gull wing
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Length :
- 6.3mm
- Collector Emitter Breakdown Voltage :
- -40V
- Datasheets
- 2STN2540
2STN2540 Documents

PNP 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
2STN2540 Overview
In this device, the DC current gain is 150 @ 2A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 450mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 450mV @ 500mA, 5A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.An input voltage of 40V volts is the breakdown voltage.Maximum collector currents can be below 5A volts.
2STN2540 Features
the DC current gain for this device is 150 @ 2A 2V
a collector emitter saturation voltage of 450mV
the vce saturation(Max) is 450mV @ 500mA, 5A
the emitter base voltage is kept at 6V
2STN2540 Applications
There are a lot of STMicroelectronics
2STN2540 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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