2STN2540
- Mfr.Part #
- 2STN2540
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 40V 5A SOT223
- Stock
- 4,957
- In Stock :
- 4,957
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- Dual
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 150 @ 2A 2V
- Max Collector Current :
- 5A
- Factory Lead Time :
- 8 Weeks
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 40V
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Finish :
- MATTE TIN
- Power Dissipation :
- 1.6W
- Length :
- 6.3mm
- Number of Terminations :
- 4
- JESD-30 Code :
- R-PDSO-G4
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Element Configuration :
- Single
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 40V
- Collector Emitter Breakdown Voltage :
- -40V
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- RoHS Status :
- ROHS3 Compliant
- Peak Reflow Temperature (Cel) :
- 260
- Base Part Number :
- 2STN
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Package / Case :
- TO-261-4, TO-261AA
- Max Breakdown Voltage :
- 40V
- Pin Count :
- 4
- Polarity/Channel Type :
- PNP
- Max Power Dissipation :
- 1.6W
- Operating Temperature :
- 150°C TJ
- Emitter Base Voltage (VEBO) :
- 6V
- Case Connection :
- COLLECTOR
- Mount :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 450mV @ 500mA, 5A
- Collector Emitter Saturation Voltage :
- 450mV
- Transistor Element Material :
- SILICON
- hFE Min :
- 50
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Width :
- 3.3mm
- Transistor Type :
- PNP
- Height :
- 1.8mm
- Terminal Form :
- Gull wing
- Datasheets
- 2STN2540

PNP 150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
2STN2540 Overview
In this device, the DC current gain is 150 @ 2A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 450mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 450mV @ 500mA, 5A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.An input voltage of 40V volts is the breakdown voltage.Maximum collector currents can be below 5A volts.
2STN2540 Features
the DC current gain for this device is 150 @ 2A 2V
a collector emitter saturation voltage of 450mV
the vce saturation(Max) is 450mV @ 500mA, 5A
the emitter base voltage is kept at 6V
2STN2540 Applications
There are a lot of STMicroelectronics
2STN2540 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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