2STN1360

Manufacturer :

STMicroelectronics

Product Category :

Transistors - Bipolar (BJT) - Single

Case Connection :

COLLECTOR

Operating Temperature :

150°C TJ

Pin Count :

4

Lead Free :

Lead Free

JESD-30 Code :

R-PDSO-G4

Collector Emitter Saturation Voltage :

500mV

Radiation Hardening :

No

Transistor Type :

NPN

Collector Emitter Breakdown Voltage :

60V

Packaging :

Tape and Reel (TR)

Number of Terminations :

4

Time@Peak Reflow Temperature-Max (s) :

30

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Gain Bandwidth Product :

130MHz

Transistor Application :

SWITCHING

Element Configuration :

Single

hFE Min :

80

DC Current Gain (hFE) (Min) @ Ic, Vce :

160 @ 1A 2V

Power Dissipation :

1.6W

Factory Lead Time :

8 Weeks

Polarity/Channel Type :

NPN

Terminal Position :

Dual

Contact Plating :

Tin

Transistor Element Material :

SILICON

Current Rating :

3A

Mount :

Surface Mount

Vce Saturation (Max) @ Ib, Ic :

500mV @ 150mA, 3A

Max Collector Current :

3A

Peak Reflow Temperature (Cel) :

260

Height :

1.8mm

JESD-609 Code :

e3

Package / Case :

TO-261-4, TO-261AA

Collector Emitter Voltage (VCEO) :

60V

Number of Elements :

1

ECCN Code :

EAR99

Emitter Base Voltage (VEBO) :

6V

Max Breakdown Voltage :

60V

RoHS Status :

ROHS3 Compliant

Max Power Dissipation :

1.6W

Mounting Type :

Surface Mount

Current - Collector Cutoff (Max) :

100nA ICBO

Width :

3.5mm

Length :

6.5mm

REACH SVHC :

No SVHC

Collector Base Voltage (VCBO) :

80V

Voltage - Rated DC :

80V

Number of Pins :

3

Frequency :

130MHz

Transition Frequency :

130MHz

Base Part Number :

2STN