2STC4467

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Mfr.Part #
2STC4467
Manufacturer
STMicroelectronics
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
TRANS NPN 120V 8A TO3P
Stock
612
In Stock :
612

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
Terminal Finish :
Matte Tin (Sn)
Transistor Application :
SWITCHING
Mounting Type :
Through Hole
Frequency :
20MHz
Number of Terminations :
3
Peak Reflow Temperature (Cel) :
260
Base Part Number :
2STC
Lead Free :
Lead Free
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 300mA, 3A
Radiation Hardening :
No
ECCN Code :
EAR99
Number of Pins :
3
Power Dissipation :
80W
Polarity/Channel Type :
NPN
JESD-609 Code :
e3
RoHS Status :
ROHS3 Compliant
Transistor Element Material :
SILICON
Collector Base Voltage (VCBO) :
120V
Current - Collector Cutoff (Max) :
10μA ICBO
Time@Peak Reflow Temperature-Max (s) :
30
Transistor Type :
NPN
Number of Elements :
1
Max Breakdown Voltage :
120V
DC Current Gain (hFE) (Min) @ Ic, Vce :
70 @ 3A 4V
Collector Emitter Breakdown Voltage :
120V
Package / Case :
TO-3P-3, SC-65-3
Collector Emitter Voltage (VCEO) :
120V
Max Power Dissipation :
80W
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Element Configuration :
Single
Packaging :
Tube
Mount :
Through Hole
Gain Bandwidth Product :
20MHz
Emitter Base Voltage (VEBO) :
6V
Pin Count :
3
Transition Frequency :
20MHz
Operating Temperature :
150°C TJ
Max Collector Current :
8A
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics 2STC4467 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Base Part Number:2STC, Number of Pins:3, Package / Case:TO-3P-3, SC-65-3, Operating Temperature:150°C TJ, 2STC4467 pinout, 2STC4467 datasheet PDF, 2STC4467 amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics 2STC4467 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics 2STC4467


NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-3P-3, SC-65-3 Tube Through Hole

2STC4467 Overview


In this device, the DC current gain is 70 @ 3A 4V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 300mA, 3A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.20MHz is present in the transition frequency.An input voltage of 120V volts is the breakdown voltage.Maximum collector currents can be below 8A volts.

2STC4467 Features


the DC current gain for this device is 70 @ 3A 4V
the vce saturation(Max) is 1.5V @ 300mA, 3A
the emitter base voltage is kept at 6V
a transition frequency of 20MHz


2STC4467 Applications


There are a lot of STMicroelectronics
2STC4467 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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