2STC2510
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- Mfr.Part #
- 2STC2510
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- TRANS NPN 100V 25A TO3P
- Stock
- 14,972
- In Stock ：
- 14,972
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 1.2A, 12A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 25A
- Collector Emitter Breakdown Voltage :
- 100V
- Gain Bandwidth Product :
- 20MHz
- Qualification Status :
- Not Qualified
- Reach Compliance Code :
- Unknown
- Collector Emitter Voltage (VCEO) :
- 1.5V
- Transition Frequency :
- 20MHz
- hFE Min :
- 40
- Mount :
- Through Hole
- Packaging :
- Tube
- Base Part Number :
- 2STC
- Max Power Dissipation :
- 125W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 12A 4V
- Power - Max :
- 125W
- Number of Pins :
- 3
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 6V
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- Mounting Type :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Pin Count :
- 3
- Operating Temperature :
- 150°C TJ
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 100V
- Transistor Type :
- NPN
- Collector Base Voltage (VCBO) :
- 100V
- Lead Free :
- Lead Free
- Package / Case :
- TO-3P-3, SC-65-3
- Datasheets
- 2STC2510
2STC2510 Documents
NPN 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-3P-3, SC-65-3 Tube Through Hole
2STC2510 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 12A 4V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 1.2A, 12A.The emitter base voltage can be kept at 6V for high efficiency.The part has a transition frequency of 20MHz.The breakdown input voltage is 100V volts.Single BJT transistor is possible to have a collector current as low as 25A volts at Single BJT transistors maximum.
2STC2510 Features
the DC current gain for this device is 40 @ 12A 4V
the vce saturation(Max) is 1.5V @ 1.2A, 12A
the emitter base voltage is kept at 6V
a transition frequency of 20MHz
2STC2510 Applications
There are a lot of STMicroelectronics
2STC2510 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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