2STBN15D100T4

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Mfr.Part #
2STBN15D100T4
Manufacturer
STMicroelectronics
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
TRANS NPN DARL 100V 12A D2PAK
Stock
33,942
In Stock :
33,942

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - Bipolar (BJT) - Single
ECCN Code :
EAR99
Number of Elements :
1
Max Collector Current :
12A
RoHS Status :
ROHS3 Compliant
Lead Free :
Lead Free
Current - Collector Cutoff (Max) :
100μA
Collector Emitter Breakdown Voltage :
100V
Base Part Number :
2STBN15
Pin Count :
4
Vce Saturation (Max) @ Ib, Ic :
1.3V @ 4mA, 4A
Power - Max :
70W
DC Current Gain (hFE) (Min) @ Ic, Vce :
750 @ 3A 3V
Transistor Element Material :
SILICON
Emitter Base Voltage (VEBO) :
5V
Collector Emitter Voltage (VCEO) :
100V
Polarity :
NPN
Max Power Dissipation :
70W
Packaging :
Tape and Reel (TR)
Contact Plating :
Tin
Collector Base Voltage (VCBO) :
100V
Transistor Type :
NPN - Darlington
Mount :
Surface Mount
Radiation Hardening :
No
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins :
3
Peak Reflow Temperature (Cel) :
245
hFE Min :
750
Case Connection :
COLLECTOR
Transistor Application :
SWITCHING
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
JESD-30 Code :
R-PSSO-G2
Terminal Form :
Gull wing
Collector Emitter Saturation Voltage :
1.5V
Terminal Position :
Single
JESD-609 Code :
e3
Operating Temperature :
150°C TJ
Mounting Type :
Surface Mount
Number of Terminations :
2
Element Configuration :
Dual
Datasheets
2STBN15D100T4
Introducing Transistors - Bipolar (BJT) - Single STMicroelectronics 2STBN15D100T4 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:2STBN15, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Pins:3, Operating Temperature:150°C TJ, Mounting Type:Surface Mount, Number of Terminations:2, 2STBN15D100T4 pinout, 2STBN15D100T4 datasheet PDF, 2STBN15D100T4 amp .Beyond Transistors - Bipolar (BJT) - Single STMicroelectronics 2STBN15D100T4 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics 2STBN15D100T4


NPN - Darlington 150°C TJ 100μA 1 Elements 2 Terminations SILICON TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Tape & Reel (TR) Surface Mount

2STBN15D100T4 Overview


In this device, the DC current gain is 750 @ 3A 3V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.3V @ 4mA, 4A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 12A volts at Single BJT transistors maximum.

2STBN15D100T4 Features


the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.3V @ 4mA, 4A
the emitter base voltage is kept at 5V


2STBN15D100T4 Applications


There are a lot of STMicroelectronics
2STBN15D100T4 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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