2STBN15D100T4
- Mfr.Part #
- 2STBN15D100T4
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 12A D2PAK
- Stock
- 33,942
- In Stock :
- 33,942
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Max Collector Current :
- 12A
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 100μA
- Collector Emitter Breakdown Voltage :
- 100V
- Base Part Number :
- 2STBN15
- Pin Count :
- 4
- Vce Saturation (Max) @ Ib, Ic :
- 1.3V @ 4mA, 4A
- Power - Max :
- 70W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 3A 3V
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Voltage (VCEO) :
- 100V
- Polarity :
- NPN
- Max Power Dissipation :
- 70W
- Packaging :
- Tape and Reel (TR)
- Contact Plating :
- Tin
- Collector Base Voltage (VCBO) :
- 100V
- Transistor Type :
- NPN - Darlington
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Number of Pins :
- 3
- Peak Reflow Temperature (Cel) :
- 245
- hFE Min :
- 750
- Case Connection :
- COLLECTOR
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSSO-G2
- Terminal Form :
- Gull wing
- Collector Emitter Saturation Voltage :
- 1.5V
- Terminal Position :
- Single
- JESD-609 Code :
- e3
- Operating Temperature :
- 150°C TJ
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 2
- Element Configuration :
- Dual
- Datasheets
- 2STBN15D100T4

NPN - Darlington 150°C TJ 100μA 1 Elements 2 Terminations SILICON TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Tape & Reel (TR) Surface Mount
2STBN15D100T4 Overview
In this device, the DC current gain is 750 @ 3A 3V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.3V @ 4mA, 4A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 12A volts at Single BJT transistors maximum.
2STBN15D100T4 Features
the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.3V @ 4mA, 4A
the emitter base voltage is kept at 5V
2STBN15D100T4 Applications
There are a lot of STMicroelectronics
2STBN15D100T4 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| 2STBN15D100 | STMicroelectronics | 9,161 | TRANS NPN DARL 100V 12A D2PAK |
















