2STBN15D100
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- Mfr.Part #
- 2STBN15D100
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 12A D2PAK
- Stock
- 9,161
- In Stock ：
- 9,161
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- REACH SVHC :
- No SVHC
- Continuous Collector Current :
- 12A
- Operating Temperature :
- 150°C TJ
- Max Breakdown Voltage :
- 100V
- Base Part Number :
- 2STBN15
- Collector Emitter Voltage (VCEO) :
- 100V
- Additional Feature :
- BUILT-IN BIAS RESISTOR
- Number of Terminations :
- 2
- Collector Base Voltage (VCBO) :
- 100V
- Polarity :
- NPN
- Collector Emitter Breakdown Voltage :
- 100V
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 8 Weeks
- JESD-30 Code :
- R-PSSO-G2
- JESD-609 Code :
- e3
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Saturation Voltage :
- 1.5V
- Contact Plating :
- Tin
- Terminal Form :
- Gull wing
- Mount :
- Surface Mount
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 100μA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 3A 3V
- Weight :
- 2.000002g
- Vce Saturation (Max) @ Ib, Ic :
- 1.3V @ 4mA, 4A
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 245
- Case Connection :
- COLLECTOR
- Radiation Hardening :
- No
- Transistor Type :
- NPN - Darlington
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 12A
- Number of Elements :
- 1
- hFE Min :
- 750
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Max Power Dissipation :
- 70W
- Datasheets
- 2STBN15D100
2STBN15D100 Documents
NPN - Darlington 150°C TJ 100μA 1 Elements 2 Terminations SILICON TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Tape & Reel (TR) Surface Mount
2STBN15D100 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 3A 3V.The collector emitter saturation voltage is 1.5V, which allows for maximum design flexibility.When VCE saturation is 1.3V @ 4mA, 4A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 12A for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.This device can take an input voltage of 100V volts before it breaks down.A maximum collector current of 12A volts can be achieved.
2STBN15D100 Features
the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.3V @ 4mA, 4A
the emitter base voltage is kept at 5V
2STBN15D100 Applications
There are a lot of STMicroelectronics
2STBN15D100 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| 2STBN15D100T4 | STMicroelectronics | 33,942 | TRANS NPN DARL 100V 12A D2PAK |
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