2STBN15D100
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- Mfr.Part #
- 2STBN15D100
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 12A D2PAK
- Stock
- 9,161
- In Stock ：
- 9,161
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Element Configuration :
- Single
- Case Connection :
- COLLECTOR
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 2
- Weight :
- 2.000002g
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 70W
- Base Part Number :
- 2STBN15
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Saturation Voltage :
- 1.5V
- Operating Temperature :
- 150°C TJ
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Polarity :
- NPN
- Max Breakdown Voltage :
- 100V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- JESD-609 Code :
- e3
- Current - Collector Cutoff (Max) :
- 100μA
- Transistor Type :
- NPN - Darlington
- Collector Base Voltage (VCBO) :
- 100V
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 12A
- Mount :
- Surface Mount
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- 245
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Terminal Form :
- Gull wing
- REACH SVHC :
- No SVHC
- ECCN Code :
- EAR99
- Transistor Application :
- SWITCHING
- hFE Min :
- 750
- JESD-30 Code :
- R-PSSO-G2
- Collector Emitter Breakdown Voltage :
- 100V
- Additional Feature :
- BUILT-IN BIAS RESISTOR
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 750 @ 3A 3V
- Factory Lead Time :
- 8 Weeks
- Contact Plating :
- Tin
- Collector Emitter Voltage (VCEO) :
- 100V
- Pin Count :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 1.3V @ 4mA, 4A
- Continuous Collector Current :
- 12A
- Datasheets
- 2STBN15D100
NPN - Darlington 150°C TJ 100μA 1 Elements 2 Terminations SILICON TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Tape & Reel (TR) Surface Mount
2STBN15D100 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 750 @ 3A 3V.The collector emitter saturation voltage is 1.5V, which allows for maximum design flexibility.When VCE saturation is 1.3V @ 4mA, 4A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 12A for high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.This device can take an input voltage of 100V volts before it breaks down.A maximum collector current of 12A volts can be achieved.
2STBN15D100 Features
the DC current gain for this device is 750 @ 3A 3V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.3V @ 4mA, 4A
the emitter base voltage is kept at 5V
2STBN15D100 Applications
There are a lot of STMicroelectronics
2STBN15D100 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| 2STBN15D100T4 | STMicroelectronics | 33,942 | TRANS NPN DARL 100V 12A D2PAK |
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