2SK4209

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Turn On Delay Time :

27 ns

Turn-Off Delay Time :

260 ns

Additional Feature :

High Reliability

Gate to Source Voltage (Vgs) :

30V

Fall Time (Typ) :

77 ns

Input Capacitance (Ciss) (Max) @ Vds :

1500pF @ 30V

Pin Count :

3

Vgs(th) (Max) @ Id :

4V @ 1mA

Mounting Type :

Through Hole

Packaging :

Tray

Rise Time :

72ns

RoHS Status :

RoHS Compliant

Number of Terminations :

3

Power Dissipation-Max :

2.5W Ta 190W Tc

Operating Temperature :

150°C TJ

Mount :

Through Hole

Transistor Application :

SWITCHING

Terminal Finish :

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Pulsed Drain Current-Max (IDM) :

24A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

HTS Code :

8541.29.00.95

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

12A Ta

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-3P-3, SC-65-3

Radiation Hardening :

No

Vgs (Max) :

±30V

Drain to Source Voltage (Vdss) :

800V

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

410 mJ

Published :

2005

Continuous Drain Current (ID) :

12A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DS Breakdown Voltage-Min :

800V

Gate Charge (Qg) (Max) @ Vgs :

75nC @ 10V

Rds On (Max) @ Id, Vgs :

1.08 Ω @ 6A, 10V