2SK4017(Q)

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Height :

5.5mm

Operating Temperature :

150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

5A Ta

Input Capacitance (Ciss) (Max) @ Vds :

730pF @ 10V

REACH SVHC :

No SVHC

Power Dissipation-Max :

20W Tc

Mount :

Through Hole

Factory Lead Time :

52 Weeks

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

100m Ω @ 2.5A, 10V

Published :

2009

Gate to Source Voltage (Vgs) :

20V

Contact Plating :

Silver, Tin

Vgs(th) (Max) @ Id :

2.5V @ 1mA

Vgs (Max) :

±20V

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

5A

Drain to Source Voltage (Vdss) :

60V

Width :

2.3mm

Rise Time :

10ns

Length :

6.5mm

Number of Pins :

3

Radiation Hardening :

No

Packaging :

Bulk

Package / Case :

TO-251-3 Stub Leads, IPak

RoHS Status :

RoHS Compliant

Series :

U-MOSIII

Power Dissipation :

20W

Fall Time (Typ) :

4 ns

Element Configuration :

Single

Threshold Voltage :

2.5V

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4V 10V

Lead Free :

Lead Free

Nominal Vgs :

2.5 V