2SK4016(Q)
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- Mfr.Part #
- 2SK4016(Q)
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 13A TO220SIS
- Stock
- 4,580
- In Stock ：
- 4,580
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Width :
- 4.5mm
- Power Dissipation :
- 50W
- Height :
- 8.1mm
- Packaging :
- Bulk
- Package / Case :
- TO-220-3 Full Pack
- Rds On (Max) @ Id, Vgs :
- 500m Ω @ 6.5A, 10V
- Rise Time :
- 60ns
- Mount :
- Through Hole
- Fall Time (Typ) :
- 50 ns
- Lead Free :
- Lead Free
- FET Type :
- N-Channel
- Number of Pins :
- 3
- Vgs (Max) :
- ±30V
- Element Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 30V
- Current - Continuous Drain (Id) @ 25°C :
- 13A Ta
- Input Capacitance (Ciss) (Max) @ Vds :
- 3100pF @ 25V
- Drain to Source Breakdown Voltage :
- 600V
- Termination :
- Through Hole
- Nominal Vgs :
- 4 V
- Radiation Hardening :
- No
- Vgs(th) (Max) @ Id :
- 4V @ 1mA
- Number of Elements :
- 1
- Dual Supply Voltage :
- 600V
- Power Dissipation-Max :
- 50W Tc
- Continuous Drain Current (ID) :
- 13A
- Length :
- 10mm
- Published :
- 2007
- Operating Temperature :
- 150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS Status :
- RoHS Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 62nC @ 10V
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- 2SK4016(Q)
N-Channel Bulk 500m Ω @ 6.5A, 10V ±30V 3100pF @ 25V 62nC @ 10V TO-220-3 Full Pack
2SK4016(Q) Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3100pF @ 25V.This device conducts a continuous drain current (ID) of 13A, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
2SK4016(Q) Features
a continuous drain current (ID) of 13A
a drain-to-source breakdown voltage of 600V voltage
2SK4016(Q) Applications
There are a lot of Toshiba Semiconductor and Storage
2SK4016(Q) applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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