2SK4177-DL-E
- Mfr.Part #
- 2SK4177-DL-E
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 1500V 2A SMP-FD
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Surface Mount
- Turn-Off Delay Time :
- 152 ns
- RoHS Status :
- RoHS Compliant
- Vgs (Max) :
- ±20V
- Number of Elements :
- 1
- Turn On Delay Time :
- 12 ns
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Number of Pins :
- 4
- Rise Time :
- 37ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 380pF @ 30V
- Power Dissipation-Max :
- 80W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Published :
- 2007
- Packaging :
- Tape and Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs :
- 37.5nC @ 10V
- Continuous Drain Current (ID) :
- 2A
- Gate to Source Voltage (Vgs) :
- 20V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Fall Time (Typ) :
- 59 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 13 Ω @ 1A, 10V
- FET Type :
- N-Channel
- Operating Temperature :
- 150°C TJ
- Power Dissipation :
- 1.65W
- Radiation Hardening :
- No
- Drain to Source Breakdown Voltage :
- 1.5kV
- Drain to Source Voltage (Vdss) :
- 1500V
- Current - Continuous Drain (Id) @ 25°C :
- 2A Ta
- Datasheets
- 2SK4177-DL-E

N-Channel Tape & Reel (TR) 13 Ω @ 1A, 10V ±20V 380pF @ 30V 37.5nC @ 10V 1500V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
2SK4177-DL-E Overview
A device's maximum input capacitance is 380pF @ 30V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 2A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=1.5kV, and this device has a drain-to-source breakdown voltage of 1.5kV voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 152 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 12 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you need to apply a 1500V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
2SK4177-DL-E Features
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 1.5kV voltage
the turn-off delay time is 152 ns
a 1500V drain to source voltage (Vdss)
2SK4177-DL-E Applications
There are a lot of ON Semiconductor
2SK4177-DL-E applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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