2SK4150TZ-E

Manufacturer :

Renesas Electronics Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

750mW Ta

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

16 Weeks

Drain to Source Voltage (Vdss) :

250V

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4V

Gate Charge (Qg) (Max) @ Vgs :

3.7nC @ 4V

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

HTS Code :

8541.21.00.95

Drain-source On Resistance-Max :

5.9Ohm

Operating Temperature :

150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

80pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

400mA Ta

Continuous Drain Current (ID) :

400mA

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Pbfree Code :

yes

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

5.7 Ω @ 200mA, 4V

Terminal Position :

BOTTOM

DS Breakdown Voltage-Min :

250V

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Published :

2010

Vgs (Max) :

±10V

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

0.4A

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE