2SK4125-1E

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Mfr.Part #
2SK4125-1E
Manufacturer
onsemi
Package / Case
TO-3P-3, SC-65-3
Datasheet
Download
Description
MOSFET N-CH 600V 17A TO3P-3L
Stock
7,394
In Stock :
7,394

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Turn-Off Delay Time :
145 ns
RoHS Status :
RoHS Compliant
Operating Temperature :
150°C TJ
Current - Continuous Drain (Id) @ 25°C :
17A Ta
Pin Count :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds :
1200pF @ 30V
Radiation Hardening :
No
Rise Time :
82ns
Number of Elements :
1
Published :
2013
Package / Case :
TO-3P-3, SC-65-3
Lead Free :
Lead Free
Fall Time (Typ) :
52 ns
Surface Mount :
No
Drain to Source Breakdown Voltage :
600V
Turn On Delay Time :
26.5 ns
Gate Charge (Qg) (Max) @ Vgs :
46nC @ 10V
Number of Pins :
3
JESD-609 Code :
e3
Power Dissipation-Max :
2.5W Ta 170W Tc
Packaging :
Tube
Element Configuration :
Single
Vgs (Max) :
±30V
FET Type :
N-Channel
Drive Voltage (Max Rds On,Min Rds On) :
10V
ECCN Code :
EAR99
Gate to Source Voltage (Vgs) :
30V
Rds On (Max) @ Id, Vgs :
610m Ω @ 7A, 10V
Power Dissipation :
2.5W
Contact Plating :
Tin
Continuous Drain Current (ID) :
17A
Pbfree Code :
yes
Mounting Type :
Through Hole
Datasheets
2SK4125-1E
Introducing Transistors - FETs, MOSFETs - Single onsemi 2SK4125-1E from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:150°C TJ, Package / Case:TO-3P-3, SC-65-3, Number of Pins:3, Mounting Type:Through Hole, 2SK4125-1E pinout, 2SK4125-1E datasheet PDF, 2SK4125-1E amp .Beyond Transistors - FETs, MOSFETs - Single onsemi 2SK4125-1E ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SK4125-1E


N-Channel Tube 610m Ω @ 7A, 10V ±30V 1200pF @ 30V 46nC @ 10V TO-3P-3, SC-65-3

2SK4125-1E Overview


A device's maximal input capacitance is 1200pF @ 30V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 17A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 600V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 145 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 26.5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.This device reduces its overall power consumption by using drive voltage (10V).

2SK4125-1E Features


a continuous drain current (ID) of 17A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 145 ns


2SK4125-1E Applications


There are a lot of ON Semiconductor
2SK4125-1E applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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