2SK4125-1E
- Mfr.Part #
- 2SK4125-1E
- Manufacturer
- onsemi
- Package / Case
- TO-3P-3, SC-65-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 17A TO3P-3L
- Stock
- 7,394
- In Stock :
- 7,394
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 145 ns
- RoHS Status :
- RoHS Compliant
- Operating Temperature :
- 150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 17A Ta
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 1200pF @ 30V
- Radiation Hardening :
- No
- Rise Time :
- 82ns
- Number of Elements :
- 1
- Published :
- 2013
- Package / Case :
- TO-3P-3, SC-65-3
- Lead Free :
- Lead Free
- Fall Time (Typ) :
- 52 ns
- Surface Mount :
- No
- Drain to Source Breakdown Voltage :
- 600V
- Turn On Delay Time :
- 26.5 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 46nC @ 10V
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Power Dissipation-Max :
- 2.5W Ta 170W Tc
- Packaging :
- Tube
- Element Configuration :
- Single
- Vgs (Max) :
- ±30V
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- ECCN Code :
- EAR99
- Gate to Source Voltage (Vgs) :
- 30V
- Rds On (Max) @ Id, Vgs :
- 610m Ω @ 7A, 10V
- Power Dissipation :
- 2.5W
- Contact Plating :
- Tin
- Continuous Drain Current (ID) :
- 17A
- Pbfree Code :
- yes
- Mounting Type :
- Through Hole
- Datasheets
- 2SK4125-1E

N-Channel Tube 610m Ω @ 7A, 10V ±30V 1200pF @ 30V 46nC @ 10V TO-3P-3, SC-65-3
2SK4125-1E Overview
A device's maximal input capacitance is 1200pF @ 30V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 17A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 600V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 145 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 26.5 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.This device reduces its overall power consumption by using drive voltage (10V).
2SK4125-1E Features
a continuous drain current (ID) of 17A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 145 ns
2SK4125-1E Applications
There are a lot of ON Semiconductor
2SK4125-1E applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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