2SK4085LS
- Mfr.Part #
- 2SK4085LS
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 11A TO220FI
- Stock
- 3,681
- In Stock :
- 3,681
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pin Count :
- 3
- Radiation Hardening :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Finish :
- Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Terminations :
- 3
- Turn-Off Delay Time :
- 146 ns
- Element Configuration :
- Single
- Pulsed Drain Current-Max (IDM) :
- 60A
- HTS Code :
- 8541.29.00.95
- Number of Pins :
- 3
- Continuous Drain Current (ID) :
- 16A
- Packaging :
- Bulk
- Additional Feature :
- High Reliability
- Rise Time :
- 78ns
- Mounting Type :
- Through Hole
- FET Type :
- N-Channel
- Published :
- 2007
- RoHS Status :
- RoHS Compliant
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 2W
- Mount :
- Through Hole
- Rds On (Max) @ Id, Vgs :
- 430m Ω @ 8A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1200pF @ 30V
- Fall Time (Typ) :
- 57 ns
- Operating Temperature :
- 150°C TJ
- Package / Case :
- TO-220-3 Full Pack
- Gate Charge (Qg) (Max) @ Vgs :
- 46.6nC @ 10V
- Avalanche Energy Rating (Eas) :
- 159 mJ
- Power Dissipation-Max :
- 2W Ta 40W Tc
- JEDEC-95 Code :
- TO-220AB
- Gate to Source Voltage (Vgs) :
- 30V
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Drain to Source Breakdown Voltage :
- 500V
- Lead Free :
- Lead Free
- Turn On Delay Time :
- 26.5 ns
- Vgs (Max) :
- ±30V
- Operating Mode :
- ENHANCEMENT MODE
- Current - Continuous Drain (Id) @ 25°C :
- 11A Tc
- Datasheets
- 2SK4085LS

N-Channel Bulk 430m Ω @ 8A, 10V ±30V 1200pF @ 30V 46.6nC @ 10V TO-220-3 Full Pack
2SK4085LS Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 159 mJ.A device's maximum input capacitance is 1200pF @ 30V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 16A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=500V, and this device has a drain-to-source breakdown voltage of 500V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 146 ns.Its maximum pulsed drain current is 60A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 26.5 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.This device uses no drive voltage (10V) to reduce its overall power consumption.
2SK4085LS Features
the avalanche energy rating (Eas) is 159 mJ
a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 146 ns
based on its rated peak drain current 60A.
2SK4085LS Applications
There are a lot of ON Semiconductor
2SK4085LS applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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