2SK4066-E

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Mfr.Part #
2SK4066-E
Manufacturer
onsemi
Package / Case
TO-220-3, Short Tab
Datasheet
Download
Description
MOSFET N-CH 60V 100A SMP
Stock
19,451
In Stock :
19,451

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Element Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Continuous Drain Current (ID) :
100A
Published :
2006
Power Dissipation-Max :
1.65W Ta 90W Tc
Package / Case :
TO-220-3, Short Tab
FET Type :
N-Channel
Radiation Hardening :
No
Drive Voltage (Max Rds On,Min Rds On) :
4V 10V
Gate to Source Voltage (Vgs) :
20V
Rds On (Max) @ Id, Vgs :
4.7m Ω @ 50A, 10V
Power Dissipation :
1.65W
Gate Charge (Qg) (Max) @ Vgs :
220nC @ 10V
Vgs (Max) :
±20V
Drain to Source Breakdown Voltage :
60V
Number of Pins :
3
Rise Time :
630ns
Operating Temperature :
150°C TJ
Current - Continuous Drain (Id) @ 25°C :
100A Ta
RoHS Status :
RoHS Compliant
Packaging :
Bulk
Input Capacitance (Ciss) (Max) @ Vds :
12500pF @ 20V
Mounting Type :
Through Hole
Turn-Off Delay Time :
860 ns
Fall Time (Typ) :
750 ns
Mount :
Through Hole
Turn On Delay Time :
80 ns
Datasheets
2SK4066-E
Introducing Transistors - FETs, MOSFETs - Single onsemi 2SK4066-E from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-220-3, Short Tab, Number of Pins:3, Operating Temperature:150°C TJ, Mounting Type:Through Hole, 2SK4066-E pinout, 2SK4066-E datasheet PDF, 2SK4066-E amp .Beyond Transistors - FETs, MOSFETs - Single onsemi 2SK4066-E ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SK4066-E


N-Channel Bulk 4.7m Ω @ 50A, 10V ±20V 12500pF @ 20V 220nC @ 10V TO-220-3, Short Tab

2SK4066-E Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 12500pF @ 20V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 100A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 60V, and this device has a drainage-to-source breakdown voltage of 60VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 860 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 80 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.Using drive voltage (4V 10V), this device contributes to a reduction in overall power consumption.

2SK4066-E Features


a continuous drain current (ID) of 100A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 860 ns


2SK4066-E Applications


There are a lot of ON Semiconductor
2SK4066-E applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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