2SJ550STL-E
- Mfr.Part #
- 2SJ550STL-E
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- Datasheet
- Download
- Description
- 15A, 60V, P-CHANNEL MOSFET
- Stock
- 700
- In Stock :
- 700
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- RoHS :
- Compliant
- Pulsed Drain Current-Max (IDM) :
- 60 A
- Polarity/Channel Type :
- P-Channel
- Drain Current-Max (Abs) (ID) :
- 15 A
- Lead Free :
- Lead Free
- JESD-30 Code :
- R-PSSO-G2
- Case Connection :
- DRAIN
- JESD-609 Code :
- e6
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Series :
- *
- Peak Reflow Temperature (Cel) :
- 245
- Qualification Status :
- Not Qualified
- Factory Lead Time :
- 1 Week
- Number of Pins :
- 3
- Max Operating Temperature :
- 150 °C
- Manufacturer :
- Renesas Electronics Corporation
- Power Dissipation-Max (Abs) :
- 50 W
- Packaging :
- Tape and Reel
- ECCN Code :
- EAR99
- Package :
- Bulk
- Gate to Source Voltage (Vgs) :
- 20 V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Surface Mount :
- yes
- Min Operating Temperature :
- -55 °C
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Continuous Drain Current (ID) :
- 15 A
- Terminal Form :
- Gull wing
- Subcategory :
- Other Transistors
- Reach Compliance Code :
- Compliant
- Terminal Finish :
- TIN BISMUTH
- Number of Terminals :
- 2
- Terminal Position :
- Single
- Product Status :
- Active
- Pin Count :
- 4
- DS Breakdown Voltage-Min :
- 60 V
- Transistor Application :
- SWITCHING
- Power Dissipation :
- 50 W
- Drain-source On Resistance-Max :
- 0.155 Ω
- Package Shape :
- RECTANGULAR
- Brand Name :
- Renesas
- Mount :
- Surface Mount
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Datasheets
- 2SJ550STL-E
Tape and Reel
2SJ550STL-E Overview
Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 15 A amps.A device can conduct a maximum continuous current of [15 A] according to its drain current.As far as peak drain current is concerned, its maximum pulsed current is 60 A.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20 V.The DS breakdown voltage should be maintained above 60 V to maintain normal operation.
2SJ550STL-E Features
a continuous drain current (ID) of 15 A
based on its rated peak drain current 60 A.
2SJ550STL-E Applications
There are a lot of Renesas
2SJ550STL-E applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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