2SJ542-E

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Product Status :

Active

Drain Current-Max (Abs) (ID) :

18 A

Supplier Device Package :

TO-220AB

Subcategory :

Other Transistors

Qualification Status :

Not Qualified

Factory Lead Time :

1 Week

Power Dissipation-Max (Abs) :

60 W

Technology :

MOSFET (Metal Oxide)

Input Capacitance (Ciss) (Max) @ Vds :

1300 pF @ 10 V

Package / Case :

TO-220-3

Vgs(th) (Max) @ Id :

2V @ 1mA

Number of Elements :

1

Pin Count :

4

Polarity/Channel Type :

P-Channel

Pulsed Drain Current-Max (IDM) :

72 A

Transistor Element Material :

SILICON

Number of Terminals :

3

Package Shape :

RECTANGULAR

JEDEC-95 Code :

TO-220AB

ECCN Code :

EAR99

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Drain-source On Resistance-Max :

0.11 Ω

JESD-609 Code :

e2

Terminal Position :

Single

Surface Mount :

No

Brand Name :

Renesas

DS Breakdown Voltage-Min :

60 V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

18A (Ta)

Manufacturer :

Renesas Electronics Corporation

Mounting Type :

Through Hole

Reach Compliance Code :

Compliant

Vgs (Max) :

±20V

Power Dissipation :

60

Rds On (Max) @ Id, Vgs :

65mOhm @ 9A, 10V

Series :

-

Continuous Drain Current Id :

18

Operating Temperature :

150°C

Package :

Bulk

Pbfree Code :

yes

JESD-30 Code :

R-PSFM-T3

Terminal Form :

THROUGH-HOLE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation (Max) :

60W (Tc)

FET Feature :

-

Terminal Finish :

TIN COPPER

Operating Mode :

ENHANCEMENT MODE

Channel Type :

P

Drain to Source Voltage (Vdss) :

60 V

FET Type :

N-Channel