2SD667L-D-BP
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- Mfr.Part #
- 2SD667L-D-BP
- Manufacturer
- Micro Commercial Components (MCC)
- Package / Case
- TO-226-3, TO-92-3 Long Body
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A TO92L
- Stock
- 45,884
- In Stock ：
- 45,884
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- Manufacturer :
- Micro Commercial Components (MCC)
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 160 @ 150mA 5V
- Operating Temperature :
- -55°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 50mA, 500mA
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Power - Max :
- 900mW
- Current - Collector (Ic) (Max) :
- 1A
- Transistor Type :
- NPN
- Voltage - Collector Emitter Breakdown (Max) :
- 80V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Package / Case :
- TO-226-3, TO-92-3 Long Body
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency - Transition :
- 140MHz
- Datasheets
- 2SD667L-D-BP
NPN -55°C~150°C TJ 10μA ICBO TO-226-3, TO-92-3 Long Body Through Hole
2SD667L-D-BP Overview
In this device, the DC current gain is 160 @ 150mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1V @ 50mA, 500mA.There is a 80V maximal voltage in the device due to collector-emitter breakdown.
2SD667L-D-BP Features
the DC current gain for this device is 160 @ 150mA 5V
the vce saturation(Max) is 1V @ 50mA, 500mA
2SD667L-D-BP Applications
There are a lot of Micro Commercial Co
2SD667L-D-BP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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