2SD667A-D-AP

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Mfr.Part #
2SD667A-D-AP
Manufacturer
Micro Commercial Components (MCC)
Package / Case
TO-226-3, TO-92-3 Long Body (Formed Leads)
Datasheet
Download
Description
TRANS NPN 100V 1A TO92MOD
Stock
25,371
In Stock :
25,371

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Manufacturer :
Micro Commercial Components (MCC)
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Type :
NPN
Number of Elements :
1
Polarity/Channel Type :
NPN
Terminal Position :
BOTTOM
Configuration :
Single
Mounting Type :
Through Hole
DC Current Gain (hFE) (Min) @ Ic, Vce :
160 @ 150mA 5V
Frequency - Transition :
140MHz
RoHS Status :
ROHS3 Compliant
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Terminations :
3
Vce Saturation (Max) @ Ib, Ic :
1V @ 50mA, 500mA
Package / Case :
TO-226-3, TO-92-3 Long Body (Formed Leads)
Current - Collector Cutoff (Max) :
10μA ICBO
Voltage - Collector Emitter Breakdown (Max) :
100V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Transistor Element Material :
SILICON
ECCN Code :
EAR99
Operating Temperature :
-55°C~150°C TJ
Current - Collector (Ic) (Max) :
1A
Surface Mount :
No
JESD-30 Code :
O-PBCY-T3
Power - Max :
900mW
Transition Frequency :
140MHz
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
2SD667A-D-AP
Introducing Transistors - Bipolar (BJT) - Single Micro Commercial Components (MCC) 2SD667A-D-AP from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Package / Case:TO-226-3, TO-92-3 Long Body (Formed Leads), Operating Temperature:-55°C~150°C TJ, 2SD667A-D-AP pinout, 2SD667A-D-AP datasheet PDF, 2SD667A-D-AP amp .Beyond Transistors - Bipolar (BJT) - Single Micro Commercial Components (MCC) 2SD667A-D-AP ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Micro Commercial Components (MCC) 2SD667A-D-AP


NPN -55°C~150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 Long Body (Formed Leads) Through Hole

2SD667A-D-AP Overview


In this device, the DC current gain is 160 @ 150mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 50mA, 500mA.140MHz is present in the transition frequency.The device exhibits a collector-emitter breakdown at 100V.

2SD667A-D-AP Features


the DC current gain for this device is 160 @ 150mA 5V
the vce saturation(Max) is 1V @ 50mA, 500mA
a transition frequency of 140MHz


2SD667A-D-AP Applications


There are a lot of Micro Commercial Co
2SD667A-D-AP applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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