2SD1949T106R
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- Mfr.Part #
- 2SD1949T106R
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.5A UMT3
- Stock
- 5,694
- In Stock ：
- 5,694
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Collector Emitter Saturation Voltage :
- 400mV
- Element Configuration :
- Single
- Terminal Position :
- Dual
- hFE Min :
- 120
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 50V
- Collector Emitter Voltage (VCEO) :
- 50V
- Number of Terminations :
- 3
- Height :
- 900μm
- Operating Temperature :
- 150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Transistor Element Material :
- SILICON
- HTS Code :
- 8541.21.00.75
- Continuous Collector Current :
- 500mA
- Current Rating :
- 500mA
- Collector Base Voltage (VCBO) :
- 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 10mA 3V
- Transistor Application :
- SWITCHING
- REACH SVHC :
- No SVHC
- Pbfree Code :
- yes
- Contact Plating :
- Copper, Silver, Tin
- Max Frequency :
- 100MHz
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- NPN
- Gain Bandwidth Product :
- 250MHz
- Max Breakdown Voltage :
- 50V
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- SC-70, SOT-323
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Form :
- Gull wing
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Transistor Type :
- NPN
- Length :
- 2mm
- Factory Lead Time :
- 13 Weeks
- Voltage - Rated DC :
- 50V
- Transition Frequency :
- 250MHz
- JESD-609 Code :
- e1
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 15mA, 150mA
- Published :
- 2008
- Number of Elements :
- 1
- Max Collector Current :
- 500mA
- Base Part Number :
- 2SD1949
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Pin Count :
- 3
- Number of Pins :
- 3
- Width :
- 1.25mm
- Max Power Dissipation :
- 200mW
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Datasheets
- 2SD1949T106R
NPN 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2SD1949T106R Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 180 @ 10mA 3V.With a collector emitter saturation voltage of 400mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 15mA, 150mA.In order to achieve high efficiency, the continuous collector voltage should be kept at 500mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 500mA.A transition frequency of 250MHz is present in the part.There is a breakdown input voltage of 50V volts that it can take.Collector current can be as low as 500mA volts at its maximum.
2SD1949T106R Features
the DC current gain for this device is 180 @ 10mA 3V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 15mA, 150mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 250MHz
2SD1949T106R Applications
There are a lot of ROHM Semiconductor
2SD1949T106R applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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