2SD1898T100R
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- Mfr.Part #
- 2SD1898T100R
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A MPT3
- Stock
- 33
- In Stock ：
- 33
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Termination :
- SMD/SMT
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- COLLECTOR
- Voltage - Rated DC :
- 80V
- Power Dissipation :
- 2W
- Continuous Collector Current :
- 1A
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Polarity/Channel Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Packaging :
- Tape and Reel (TR)
- Published :
- 2009
- Width :
- 2.7mm
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 82
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Operating Temperature :
- 150°C TJ
- Contact Plating :
- Copper, Tin
- Peak Reflow Temperature (Cel) :
- 260
- Length :
- 4.7mm
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 80V
- Current Rating :
- 1A
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Base Part Number :
- 2SD1898
- Collector Emitter Saturation Voltage :
- 400mV
- Gain Bandwidth Product :
- 100MHz
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 20mA, 500mA
- Max Power Dissipation :
- 2W
- Mount :
- Surface Mount
- Transition Frequency :
- 100MHz
- Terminal Form :
- Flat
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e2
- Collector Base Voltage (VCBO) :
- 120V
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 5V
- Frequency :
- 100MHz
- Collector Emitter Voltage (VCEO) :
- 80V
- REACH SVHC :
- No SVHC
- Height :
- 1.4mm
- Transistor Type :
- NPN
- Max Collector Current :
- 1A
- Terminal Finish :
- TIN COPPER
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 500mA 3V
- Max Breakdown Voltage :
- 80V
- Package / Case :
- TO-243AA
- Number of Terminations :
- 3
- Datasheets
- 2SD1898T100R
NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
2SD1898T100R Overview
DC current gain in this device equals 180 @ 500mA 3V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 400mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 20mA, 500mA.Single BJT transistor is essential to maintain the continuous collector voltage at 1A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 1A current rating.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 80V volts.In extreme cases, the collector current can be as low as 1A volts.
2SD1898T100R Features
the DC current gain for this device is 180 @ 500mA 3V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 20mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 100MHz
2SD1898T100R Applications
There are a lot of ROHM Semiconductor
2SD1898T100R applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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