2SD1866TV2
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- Mfr.Part #
- 2SD1866TV2
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 3-SIP
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 2A ATV
- Stock
- 13,848
- In Stock ：
- 13,848
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Collector Base Voltage (VCBO) :
- 70V
- Packaging :
- Tape and Box (TB)
- Contact Plating :
- Copper, Silver, Tin
- Qualification Status :
- Not Qualified
- Collector Emitter Breakdown Voltage :
- 60V
- hFE Min :
- 1000
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- HTS Code :
- 8541.29.00.75
- Pin Count :
- 3
- Max Collector Current :
- 2A
- Max Power Dissipation :
- 1W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 1A 2V
- Package / Case :
- 3-SIP
- Transistor Element Material :
- SILICON
- Additional Feature :
- BUILT IN BIAS RESISTANCE RATIO IS 0.0857
- Published :
- 2004
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- Mount :
- Through Hole
- Terminal Finish :
- TIN SILVER COPPER
- Collector Emitter Voltage (VCEO) :
- 70V
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Voltage - Rated DC :
- 60V
- Current Rating :
- 2A
- Emitter Base Voltage (VEBO) :
- 6V
- Transition Frequency :
- 80MHz
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 1mA, 1A
- Number of Elements :
- 1
- VCEsat-Max :
- 1.5 V
- Polarity :
- NPN
- JESD-609 Code :
- e1
- Number of Terminations :
- 3
- Transistor Type :
- NPN - Darlington
- Datasheets
- 2SD1866TV2
NPN - Darlington 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON 3-SIP Tape & Box (TB) Through Hole
2SD1866TV2 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 1A 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 1mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is 2A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 80MHz.During maximum operation, collector current can be as low as 2A volts.
2SD1866TV2 Features
the DC current gain for this device is 1000 @ 1A 2V
the vce saturation(Max) is 1.5V @ 1mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 2A
a transition frequency of 80MHz
2SD1866TV2 Applications
There are a lot of ROHM Semiconductor
2SD1866TV2 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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