2SD1864TV2R
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- Mfr.Part #
- 2SD1864TV2R
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 3-SIP
- Datasheet
- Download
- Description
- TRANS NPN 50V 3A ATV
- Stock
- 38,944
- In Stock ：
- 38,944
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 50V
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Qualification Status :
- Not Qualified
- Element Configuration :
- Single
- hFE Min :
- 180
- Published :
- 2001
- Polarity/Channel Type :
- NPN
- Max Collector Current :
- 3A
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 200mA, 2A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Collector Base Voltage (VCBO) :
- 60V
- Max Breakdown Voltage :
- 50V
- Voltage - Rated DC :
- 50V
- Terminal Finish :
- TIN SILVER COPPER
- Transition Frequency :
- 90MHz
- Transistor Application :
- SWITCHING
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 1V
- Package / Case :
- 3-SIP
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Operating Temperature :
- 150°C TJ
- Emitter Base Voltage (VEBO) :
- 5V
- HTS Code :
- 8541.29.00.75
- JESD-609 Code :
- e1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 500mA 3V
- Transistor Element Material :
- SILICON
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Max Power Dissipation :
- 1W
- Pin Count :
- 3
- Gain Bandwidth Product :
- 90MHz
- Current Rating :
- 3A
- Mount :
- Through Hole
- Packaging :
- Tape and Box (TB)
- JESD-30 Code :
- R-PSIP-T3
- Base Part Number :
- 2SD1864
- Datasheets
- 2SD1864TV2R
NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN 3-SIP Tape & Box (TB) Through Hole
2SD1864TV2R Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 180 @ 500mA 3V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 200mA, 2A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 3A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 90MHz.The breakdown input voltage is 50V volts.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.
2SD1864TV2R Features
the DC current gain for this device is 180 @ 500mA 3V
the vce saturation(Max) is 1V @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 90MHz
2SD1864TV2R Applications
There are a lot of ROHM Semiconductor
2SD1864TV2R applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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