2SD1864TV2R
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- Mfr.Part #
- 2SD1864TV2R
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 3-SIP
- Datasheet
- Download
- Description
- TRANS NPN 50V 3A ATV
- Stock
- 38,944
- In Stock ：
- 38,944
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Rated DC :
- 50V
- Transistor Application :
- SWITCHING
- Collector Emitter Breakdown Voltage :
- 50V
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 500mA 3V
- Polarity/Channel Type :
- NPN
- HTS Code :
- 8541.29.00.75
- Lead Free :
- Lead Free
- Current Rating :
- 3A
- Base Part Number :
- 2SD1864
- JESD-30 Code :
- R-PSIP-T3
- hFE Min :
- 180
- Number of Elements :
- 1
- Pin Count :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Mounting Type :
- Through Hole
- Packaging :
- Tape and Box (TB)
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 1V
- Mount :
- Through Hole
- JESD-609 Code :
- e1
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 90MHz
- Transistor Element Material :
- SILICON
- Published :
- 2001
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 50V
- Collector Base Voltage (VCBO) :
- 60V
- Qualification Status :
- Not Qualified
- Max Power Dissipation :
- 1W
- Terminal Finish :
- TIN SILVER COPPER
- Max Collector Current :
- 3A
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 90MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- 3-SIP
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 200mA, 2A
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- 2SD1864TV2R
2SD1864TV2R Documents
NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN 3-SIP Tape & Box (TB) Through Hole
2SD1864TV2R Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 180 @ 500mA 3V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 200mA, 2A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 3A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 90MHz.The breakdown input voltage is 50V volts.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.
2SD1864TV2R Features
the DC current gain for this device is 180 @ 500mA 3V
the vce saturation(Max) is 1V @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 90MHz
2SD1864TV2R Applications
There are a lot of ROHM Semiconductor
2SD1864TV2R applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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