2SD1864TV2R
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- Mfr.Part #
- 2SD1864TV2R
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 3-SIP
- Datasheet
- Download
- Description
- TRANS NPN 50V 3A ATV
- Stock
- 38,944
- In Stock ：
- 38,944
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 50V
- Collector Emitter Voltage (VCEO) :
- 1V
- Max Collector Current :
- 3A
- Transistor Type :
- NPN
- Base Part Number :
- 2SD1864
- Packaging :
- Tape and Box (TB)
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Polarity/Channel Type :
- NPN
- Published :
- 2001
- Max Breakdown Voltage :
- 50V
- Collector Base Voltage (VCBO) :
- 60V
- Pin Count :
- 3
- Voltage - Rated DC :
- 50V
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Qualification Status :
- Not Qualified
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Max Power Dissipation :
- 1W
- HTS Code :
- 8541.29.00.75
- Package / Case :
- 3-SIP
- Mount :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 200mA, 2A
- Number of Terminations :
- 3
- Gain Bandwidth Product :
- 90MHz
- Operating Temperature :
- 150°C TJ
- Emitter Base Voltage (VEBO) :
- 5V
- Terminal Finish :
- TIN SILVER COPPER
- JESD-609 Code :
- e1
- Mounting Type :
- Through Hole
- Transition Frequency :
- 90MHz
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- hFE Min :
- 180
- Current Rating :
- 3A
- JESD-30 Code :
- R-PSIP-T3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 500mA 3V
- Datasheets
- 2SD1864TV2R
NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN 3-SIP Tape & Box (TB) Through Hole
2SD1864TV2R Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 180 @ 500mA 3V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 200mA, 2A.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 3A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 90MHz.The breakdown input voltage is 50V volts.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.
2SD1864TV2R Features
the DC current gain for this device is 180 @ 500mA 3V
the vce saturation(Max) is 1V @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 3A
a transition frequency of 90MHz
2SD1864TV2R Applications
There are a lot of ROHM Semiconductor
2SD1864TV2R applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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