2SD1863TV2R
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- Mfr.Part #
- 2SD1863TV2R
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 3-SIP
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A ATV
- Stock
- 3,051
- In Stock ：
- 3,051
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- Current Rating :
- 1A
- Pbfree Code :
- yes
- Max Breakdown Voltage :
- 80V
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 80V
- Collector Emitter Voltage (VCEO) :
- 400mV
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 100V
- Mount :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 5V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- hFE Min :
- 180
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Package / Case :
- 3-SIP
- Terminal Finish :
- TIN SILVER COPPER
- Published :
- 2004
- Element Configuration :
- Single
- Operating Temperature :
- 150°C TJ
- Transition Frequency :
- 100MHz
- Transistor Element Material :
- SILICON
- JESD-30 Code :
- R-PSIP-T3
- Base Part Number :
- 2SD1863
- Packaging :
- Tape and Box (TB)
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 1W
- Transistor Type :
- NPN
- Voltage - Rated DC :
- 80V
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 20mA, 500mA
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 500mA 3V
- JESD-609 Code :
- e1
- Qualification Status :
- Not Qualified
- Max Collector Current :
- 1A
- Gain Bandwidth Product :
- 100MHz
- Datasheets
- 2SD1863TV2R
NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN 3-SIP Tape & Box (TB) Through Hole
2SD1863TV2R Overview
In this device, the DC current gain is 180 @ 500mA 3V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 20mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 80V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
2SD1863TV2R Features
the DC current gain for this device is 180 @ 500mA 3V
the vce saturation(Max) is 400mV @ 20mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 100MHz
2SD1863TV2R Applications
There are a lot of ROHM Semiconductor
2SD1863TV2R applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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