2SD1859TV2Q
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- Mfr.Part #
- 2SD1859TV2Q
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 3-SIP
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.7A ATV
- Stock
- 12,175
- In Stock ：
- 12,175
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 3A
- hFE Min :
- 120
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 80V
- Collector Emitter Breakdown Voltage :
- 50V
- Base Part Number :
- 2SD1859
- Number of Terminations :
- 3
- Voltage - Rated DC :
- 80V
- Pbfree Code :
- yes
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Current Rating :
- 700mA
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Published :
- 2004
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Gain Bandwidth Product :
- 120MHz
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 50mA, 500mA
- Max Breakdown Voltage :
- 80V
- Mount :
- Through Hole
- Polarity/Channel Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 1V
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 5V
- Element Configuration :
- Single
- Operating Temperature :
- 150°C TJ
- Transition Frequency :
- 120MHz
- Max Power Dissipation :
- 1W
- Pin Count :
- 3
- Terminal Finish :
- TIN SILVER COPPER
- Packaging :
- Tape and Box (TB)
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e1
- Qualification Status :
- Not Qualified
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 3V
- JESD-30 Code :
- R-PSIP-T3
- Collector Emitter Saturation Voltage :
- 200mV
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Package / Case :
- 3-SIP
- Datasheets
- 2SD1859TV2Q
NPN 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN 3-SIP Tape & Box (TB) Through Hole
2SD1859TV2Q Overview
This device has a DC current gain of 120 @ 100mA 3V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 200mV.A VCE saturation (Max) of 400mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 700mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 120MHz.A breakdown input voltage of 80V volts can be used.A maximum collector current of 3A volts is possible.
2SD1859TV2Q Features
the DC current gain for this device is 120 @ 100mA 3V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 400mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 700mA
a transition frequency of 120MHz
2SD1859TV2Q Applications
There are a lot of ROHM Semiconductor
2SD1859TV2Q applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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