2SD1857TV2Q
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- Mfr.Part #
- 2SD1857TV2Q
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 3-SIP
- Datasheet
- Download
- Description
- TRANS NPN 120V 2A ATV
- Stock
- 3,808
- In Stock ：
- 3,808
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Voltage - Rated DC :
- 120V
- Number of Elements :
- 1
- Terminal Finish :
- TIN SILVER COPPER
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- 2SD1857
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Pin Count :
- 3
- Gain Bandwidth Product :
- 80MHz
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 100mA, 1A
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 120V
- Peak Reflow Temperature (Cel) :
- 260
- Qualification Status :
- Not Qualified
- Operating Temperature :
- 150°C TJ
- JESD-30 Code :
- R-PSIP-T3
- Transition Frequency :
- 80MHz
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Package / Case :
- 3-SIP
- Packaging :
- Tape and Box (TB)
- Current - Collector (Ic) (Max) :
- 2A
- HTS Code :
- 8541.29.00.75
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Voltage (VCEO) :
- 2V
- Number of Terminations :
- 3
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 1W
- hFE Min :
- 120
- Max Collector Current :
- 2A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 5V
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 120V
- Emitter Base Voltage (VEBO) :
- 5V
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Through Hole
- Current Rating :
- 1.5A
- JESD-609 Code :
- e1
- Mount :
- Through Hole
- Published :
- 2006
- Datasheets
- 2SD1857TV2Q
NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN 3-SIP Tape & Box (TB) Through Hole
2SD1857TV2Q Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 100mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2V @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 1.5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 80MHz.During maximum operation, collector current can be as low as 2A volts.
2SD1857TV2Q Features
the DC current gain for this device is 120 @ 100mA 5V
the vce saturation(Max) is 2V @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
a transition frequency of 80MHz
2SD1857TV2Q Applications
There are a lot of ROHM Semiconductor
2SD1857TV2Q applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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