2SD1857TV2Q
- Mfr.Part #
- 2SD1857TV2Q
- Manufacturer
- ROHM Semiconductor
- Package / Case
- 3-SIP
- Datasheet
- Download
- Description
- TRANS NPN 120V 2A ATV
- Stock
- 3,808
- In Stock :
- 3,808
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- NPN
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 100mA, 1A
- Number of Elements :
- 1
- Gain Bandwidth Product :
- 80MHz
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Terminal Finish :
- TIN SILVER COPPER
- JESD-609 Code :
- e1
- Voltage - Rated DC :
- 120V
- Qualification Status :
- Not Qualified
- Max Power Dissipation :
- 1W
- Pin Count :
- 3
- Package / Case :
- 3-SIP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Max Collector Current :
- 2A
- Current Rating :
- 1.5A
- Published :
- 2006
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Collector Emitter Voltage (VCEO) :
- 2V
- Emitter Base Voltage (VEBO) :
- 5V
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tape and Box (TB)
- Element Configuration :
- Single
- Current - Collector (Ic) (Max) :
- 2A
- JESD-30 Code :
- R-PSIP-T3
- Base Part Number :
- 2SD1857
- Transistor Application :
- SWITCHING
- Transition Frequency :
- 80MHz
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 120V
- hFE Min :
- 120
- HTS Code :
- 8541.29.00.75
- Mount :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 5V
- Collector Base Voltage (VCBO) :
- 120V
- Datasheets
- 2SD1857TV2Q

NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN 3-SIP Tape & Box (TB) Through Hole
2SD1857TV2Q Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 100mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2V @ 100mA, 1A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 1.5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 80MHz.During maximum operation, collector current can be as low as 2A volts.
2SD1857TV2Q Features
the DC current gain for this device is 120 @ 100mA 5V
the vce saturation(Max) is 2V @ 100mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1.5A
a transition frequency of 80MHz
2SD1857TV2Q Applications
There are a lot of ROHM Semiconductor
2SD1857TV2Q applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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