2SD1835T-AA
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- Mfr.Part #
- 2SD1835T-AA
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 50V 2A 3NP
- Stock
- 600
- In Stock ：
- 600
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- Transistor Type :
- NPN
- Packaging :
- Tape and Box (TB)
- RoHS Status :
- ROHS3 Compliant
- Frequency - Transition :
- 150MHz
- Power - Max :
- 750mW
- Current - Collector (Ic) (Max) :
- 2A
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 50mA, 1A
- Operating Temperature :
- 150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 2V
- Supplier Device Package :
- 3-NP
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- 2SD1835T-AA
NPN 150°C TJ 100nA ICBO TO-226-3, TO-92-3 (TO-226AA) Tape & Box (TB) Through Hole
2SD1835T-AA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 100mA 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 50mA, 1A.The product comes in the supplier device package of 3-NP.A 50V maximal voltage - Collector Emitter Breakdown is present in the device.
2SD1835T-AA Features
the DC current gain for this device is 100 @ 100mA 2V
the vce saturation(Max) is 400mV @ 50mA, 1A
the supplier device package of 3-NP
2SD1835T-AA Applications
There are a lot of Rochester Electronics, LLC
2SD1835T-AA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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