2SD1835S
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- Mfr.Part #
- 2SD1835S
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 50V 2A 3NP
- Stock
- 4,890
- In Stock ：
- 4,890
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Collector Base Voltage (VCBO) :
- 60V
- Lead Free :
- Lead Free
- Collector Emitter Voltage (VCEO) :
- 400mV
- Transistor Type :
- NPN
- Packaging :
- Bulk
- Mounting Type :
- Through Hole
- Max Collector Current :
- 2A
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- RoHS Status :
- RoHS Compliant
- Number of Pins :
- 3
- Base Part Number :
- 2SD1835
- Frequency - Transition :
- 150MHz
- Pbfree Code :
- yes
- Terminal Finish :
- Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Power - Max :
- 750mW
- Emitter Base Voltage (VEBO) :
- 6V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 140 @ 100mA 2V
- Collector Emitter Breakdown Voltage :
- 50V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 150°C TJ
- Max Power Dissipation :
- 750mW
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 50mA, 1A
- Published :
- 2013
- Datasheets
- 2SD1835S
NPN 150°C TJ 100nA ICBO TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
2SD1835S Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 140 @ 100mA 2V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 400mV @ 50mA, 1A.If the emitter base voltage is kept at 6V, a high level of efficiency can be achieved.Collector current can be as low as 2A volts at its maximum.
2SD1835S Features
the DC current gain for this device is 140 @ 100mA 2V
the vce saturation(Max) is 400mV @ 50mA, 1A
the emitter base voltage is kept at 6V
2SD1835S Applications
There are a lot of ON Semiconductor
2SD1835S applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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