2SD1816S-TL-H
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- Mfr.Part #
- 2SD1816S-TL-H
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 100V 4A TPFA
- Stock
- 4,631
- In Stock ：
- 4,631
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-30 Code :
- R-PSSO-G2
- Collector Emitter Saturation Voltage :
- 400mV
- Pbfree Code :
- yes
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Collector Emitter Breakdown Voltage :
- 100V
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 140 @ 500mA 5V
- Collector Emitter Voltage (VCEO) :
- 100V
- Polarity/Channel Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Max Frequency :
- 180MHz
- Transistor Type :
- NPN
- Max Power Dissipation :
- 1W
- RoHS Status :
- ROHS3 Compliant
- Pin Count :
- 3
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- ECCN Code :
- EAR99
- Frequency - Transition :
- 180MHz
- Lead Free :
- Lead Free
- Operating Temperature :
- 150°C TJ
- Height :
- 2.3mm
- Surface Mount :
- yes
- Transition Frequency :
- 180MHz
- Reach Compliance Code :
- not_compliant
- Factory Lead Time :
- 2 Weeks
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 6.5mm
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Base Voltage (VCBO) :
- 120V
- HTS Code :
- 8541.29.00.75
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 200mA, 2A
- Base Part Number :
- 2SD1816
- hFE Min :
- 70
- Width :
- 5.5mm
- Halogen Free :
- Halogen Free
- Max Collector Current :
- 4A
- Case Connection :
- COLLECTOR
- JESD-609 Code :
- e6
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 2
- Published :
- 2017
- Datasheets
- 2SD1816S-TL-H
2SD1816S-TL-H Documents
NPN 150°C TJ 1μA ICBO 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SD1816S-TL-H Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 140 @ 500mA 5V.The collector emitter saturation voltage is 400mV, which allows for maximum design flexibility.When VCE saturation is 400mV @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.In the part, the transition frequency is 180MHz.A maximum collector current of 4A volts can be achieved.
2SD1816S-TL-H Features
the DC current gain for this device is 140 @ 500mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 180MHz
2SD1816S-TL-H Applications
There are a lot of ON Semiconductor
2SD1816S-TL-H applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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