2SD1816S-E
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- Mfr.Part #
- 2SD1816S-E
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS NPN 100V 4A TP
- Stock
- 5,836
- In Stock ：
- 5,836
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 4A
- Number of Terminations :
- 3
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- Packaging :
- Bulk
- Case Connection :
- COLLECTOR
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Breakdown Voltage :
- 100V
- Pin Count :
- 3
- Max Power Dissipation :
- 1W
- Gain Bandwidth Product :
- 130MHz
- Contact Plating :
- Tin
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 500mA 5V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Base Part Number :
- 2SD1816
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Surface Mount :
- No
- Transistor Type :
- NPN
- Factory Lead Time :
- 2 Weeks
- Collector Emitter Voltage (VCEO) :
- 100V
- Reach Compliance Code :
- not_compliant
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 120V
- Polarity/Channel Type :
- NPN
- Number of Pins :
- 3
- Frequency :
- 180MHz
- Transition Frequency :
- 180MHz
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 200mA, 2A
- ECCN Code :
- EAR99
- Power Dissipation :
- 1W
- JESD-609 Code :
- e6
- Published :
- 2012
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 6V
- Datasheets
- 2SD1816S-E
NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole
2SD1816S-E Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 70 @ 500mA 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 180MHz in the part.When collector current reaches its maximum, it can reach 4A volts.
2SD1816S-E Features
the DC current gain for this device is 70 @ 500mA 5V
the vce saturation(Max) is 400mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 180MHz
2SD1816S-E Applications
There are a lot of ON Semiconductor
2SD1816S-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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