2SD1816S-E
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- Mfr.Part #
- 2SD1816S-E
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS NPN 100V 4A TP
- Stock
- 5,836
- In Stock ：
- 5,836
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 180MHz
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Max Collector Current :
- 4A
- Element Configuration :
- Single
- Power Dissipation :
- 1W
- Published :
- 2012
- Collector Emitter Breakdown Voltage :
- 100V
- Collector Emitter Voltage (VCEO) :
- 100V
- Factory Lead Time :
- 2 Weeks
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Case Connection :
- COLLECTOR
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Transistor Application :
- SWITCHING
- Operating Temperature :
- 150°C TJ
- Packaging :
- Bulk
- JESD-609 Code :
- e6
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 200mA, 2A
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Reach Compliance Code :
- not_compliant
- Emitter Base Voltage (VEBO) :
- 6V
- Polarity/Channel Type :
- NPN
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- 2SD1816
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 500mA 5V
- Contact Plating :
- Tin
- Mounting Type :
- Through Hole
- Max Power Dissipation :
- 1W
- Frequency :
- 180MHz
- Surface Mount :
- No
- Transistor Element Material :
- SILICON
- Transistor Type :
- NPN
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Gain Bandwidth Product :
- 130MHz
- Collector Base Voltage (VCBO) :
- 120V
- Pbfree Code :
- yes
- Datasheets
- 2SD1816S-E
NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole
2SD1816S-E Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 70 @ 500mA 5V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 6V can result in a high level of efficiency.There is a transition frequency of 180MHz in the part.When collector current reaches its maximum, it can reach 4A volts.
2SD1816S-E Features
the DC current gain for this device is 70 @ 500mA 5V
the vce saturation(Max) is 400mV @ 200mA, 2A
the emitter base voltage is kept at 6V
a transition frequency of 180MHz
2SD1816S-E Applications
There are a lot of ON Semiconductor
2SD1816S-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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