2SD1815T-TL-E
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- Mfr.Part #
- 2SD1815T-TL-E
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 100V 3A TPFA
- Stock
- 36,143
- In Stock ：
- 36,143
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 6V
- Factory Lead Time :
- 2 Weeks
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Type :
- NPN
- Base Part Number :
- 2SD1815
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Surface Mount :
- yes
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 150mA, 1.5A
- Collector Emitter Voltage (VCEO) :
- 100V
- Max Power Dissipation :
- 1W
- JESD-609 Code :
- e6
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Surface Mount
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Height :
- 5.5mm
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Max Collector Current :
- 3A
- Collector Emitter Saturation Voltage :
- 400mV
- Collector Base Voltage (VCBO) :
- 120V
- Polarity/Channel Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 100V
- Length :
- 6.5mm
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Pbfree Code :
- yes
- Reach Compliance Code :
- not_compliant
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Frequency - Transition :
- 180MHz
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 500mA 5V
- Published :
- 2007
- Contact Plating :
- Tin
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Max Frequency :
- 180MHz
- Width :
- 2.3mm
- Datasheets
- 2SD1815T-TL-E
NPN 150°C TJ 1μA ICBO NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SD1815T-TL-E Overview
In this device, the DC current gain is 70 @ 500mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 400mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 150mA, 1.5A.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
2SD1815T-TL-E Features
the DC current gain for this device is 70 @ 500mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 150mA, 1.5A
the emitter base voltage is kept at 6V
2SD1815T-TL-E Applications
There are a lot of ON Semiconductor
2SD1815T-TL-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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