2SD1815T-TL-E
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- Mfr.Part #
- 2SD1815T-TL-E
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 100V 3A TPFA
- Stock
- 36,143
- In Stock ：
- 36,143
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 150mA, 1.5A
- Published :
- 2007
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Contact Plating :
- Tin
- Element Configuration :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 100V
- Operating Temperature :
- 150°C TJ
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Emitter Saturation Voltage :
- 400mV
- Mounting Type :
- Surface Mount
- Pin Count :
- 3
- Base Part Number :
- 2SD1815
- Collector Base Voltage (VCBO) :
- 120V
- Max Collector Current :
- 3A
- JESD-609 Code :
- e6
- Transistor Type :
- NPN
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Height :
- 5.5mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 500mA 5V
- Surface Mount :
- yes
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- NPN
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 1W
- Frequency - Transition :
- 180MHz
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Collector Emitter Breakdown Voltage :
- 100V
- Number of Pins :
- 3
- Width :
- 2.3mm
- Reach Compliance Code :
- not_compliant
- Packaging :
- Tape and Reel (TR)
- Max Frequency :
- 180MHz
- Length :
- 6.5mm
- Factory Lead Time :
- 2 Weeks
- Pbfree Code :
- yes
- Datasheets
- 2SD1815T-TL-E
NPN 150°C TJ 1μA ICBO NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SD1815T-TL-E Overview
In this device, the DC current gain is 70 @ 500mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 400mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 150mA, 1.5A.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.
2SD1815T-TL-E Features
the DC current gain for this device is 70 @ 500mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 150mA, 1.5A
the emitter base voltage is kept at 6V
2SD1815T-TL-E Applications
There are a lot of ON Semiconductor
2SD1815T-TL-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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