2SD1815T-E
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- Mfr.Part #
- 2SD1815T-E
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS NPN 100V 3A TP
- Stock
- 37,177
- In Stock ：
- 37,177
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 150mA, 1.5A
- Frequency - Transition :
- 180MHz
- Operating Temperature :
- 150°C TJ
- Supplier Device Package :
- TP
- Power - Max :
- 1W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 500mA 5V
- Mounting Type :
- Through Hole
- Transistor Type :
- NPN
- Packaging :
- Bulk
- RoHS Status :
- ROHS3 Compliant
- Voltage - Collector Emitter Breakdown (Max) :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector (Ic) (Max) :
- 3A
- Datasheets
- 2SD1815T-E
NPN 150°C TJ 1μA ICBO TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole
2SD1815T-E Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 70 @ 500mA 5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 150mA, 1.5A.TP is the supplier device package for this product.This device displays a 100V maximum voltage - Collector Emitter Breakdown.
2SD1815T-E Features
the DC current gain for this device is 70 @ 500mA 5V
the vce saturation(Max) is 400mV @ 150mA, 1.5A
the supplier device package of TP
2SD1815T-E Applications
There are a lot of Rochester Electronics, LLC
2SD1815T-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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