2SD1815S-E
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- Mfr.Part #
- 2SD1815S-E
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS NPN 100V 3A TP
- Stock
- 39,360
- In Stock ：
- 39,360
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN
- Surface Mount :
- No
- Max Collector Current :
- 3A
- Published :
- 2018
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- JESD-609 Code :
- e6
- Packaging :
- Bulk
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 500mA 5V
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- 400mV
- Frequency :
- 180MHz
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Collector Emitter Breakdown Voltage :
- 100V
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 150mA, 1.5A
- Base Part Number :
- 2SD1815
- ECCN Code :
- EAR99
- Reach Compliance Code :
- not_compliant
- Factory Lead Time :
- 2 Weeks
- Emitter Base Voltage (VEBO) :
- 6V
- Operating Temperature :
- 150°C TJ
- Polarity/Channel Type :
- NPN
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Configuration :
- Single
- Power Dissipation :
- 1W
- Current - Collector (Ic) (Max) :
- 3A
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 120V
- Contact Plating :
- Tin
- Max Power Dissipation :
- 1W
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Datasheets
- 2SD1815S-E
NPN 150°C TJ 1μA ICBO 1 Elements NPN TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole
2SD1815S-E Overview
In this device, the DC current gain is 70 @ 500mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 150mA, 1.5A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.Maximum collector currents can be below 3A volts.
2SD1815S-E Features
the DC current gain for this device is 70 @ 500mA 5V
the vce saturation(Max) is 400mV @ 150mA, 1.5A
the emitter base voltage is kept at 6V
2SD1815S-E Applications
There are a lot of ON Semiconductor
2SD1815S-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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