2SD1815S-E
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- Mfr.Part #
- 2SD1815S-E
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS NPN 100V 3A TP
- Stock
- 39,360
- In Stock ：
- 39,360
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Published :
- 2018
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-609 Code :
- e6
- Contact Plating :
- Tin
- Pin Count :
- 3
- Reach Compliance Code :
- not_compliant
- Current - Collector (Ic) (Max) :
- 3A
- Power Dissipation :
- 1W
- Configuration :
- Single
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Collector Base Voltage (VCBO) :
- 120V
- Frequency :
- 180MHz
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Mounting Type :
- Through Hole
- Surface Mount :
- No
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- 2SD1815
- Polarity/Channel Type :
- NPN
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 3A
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 400mV
- Packaging :
- Bulk
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 500mA 5V
- ECCN Code :
- EAR99
- Factory Lead Time :
- 2 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 150mA, 1.5A
- Pbfree Code :
- yes
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Emitter Base Voltage (VEBO) :
- 6V
- Max Power Dissipation :
- 1W
- Collector Emitter Breakdown Voltage :
- 100V
- Datasheets
- 2SD1815S-E
NPN 150°C TJ 1μA ICBO 1 Elements NPN TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole
2SD1815S-E Overview
In this device, the DC current gain is 70 @ 500mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 150mA, 1.5A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.Maximum collector currents can be below 3A volts.
2SD1815S-E Features
the DC current gain for this device is 70 @ 500mA 5V
the vce saturation(Max) is 400mV @ 150mA, 1.5A
the emitter base voltage is kept at 6V
2SD1815S-E Applications
There are a lot of ON Semiconductor
2SD1815S-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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