2SD1815S-E
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- Mfr.Part #
- 2SD1815S-E
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS NPN 100V 3A TP
- Stock
- 39,360
- In Stock ：
- 39,360
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 70 @ 500mA 5V
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 150mA, 1.5A
- Mounting Type :
- Through Hole
- Transistor Type :
- NPN
- Published :
- 2018
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Max Collector Current :
- 3A
- Frequency :
- 180MHz
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Current - Collector (Ic) (Max) :
- 3A
- Pbfree Code :
- yes
- Pin Count :
- 3
- Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 120V
- Contact Plating :
- Tin
- JESD-609 Code :
- e6
- Lead Free :
- Lead Free
- Reach Compliance Code :
- not_compliant
- Collector Emitter Voltage (VCEO) :
- 400mV
- Factory Lead Time :
- 2 Weeks
- Surface Mount :
- No
- Collector Emitter Breakdown Voltage :
- 100V
- Base Part Number :
- 2SD1815
- Operating Temperature :
- 150°C TJ
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 6V
- Power Dissipation :
- 1W
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Pins :
- 3
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Max Power Dissipation :
- 1W
- Packaging :
- Bulk
- Datasheets
- 2SD1815S-E
NPN 150°C TJ 1μA ICBO 1 Elements NPN TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole
2SD1815S-E Overview
In this device, the DC current gain is 70 @ 500mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 150mA, 1.5A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.Maximum collector currents can be below 3A volts.
2SD1815S-E Features
the DC current gain for this device is 70 @ 500mA 5V
the vce saturation(Max) is 400mV @ 150mA, 1.5A
the emitter base voltage is kept at 6V
2SD1815S-E Applications
There are a lot of ON Semiconductor
2SD1815S-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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