2SD1805G-E

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Mfr.Part #
2SD1805G-E
Manufacturer
onsemi
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
TRANS NPN 20V 5A TP
Stock
5,666
In Stock :
5,666

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Base Voltage (VCBO) :
60V
Emitter Base Voltage (VEBO) :
6V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Max Power Dissipation :
1W
Base Part Number :
2SD1805
Mounting Type :
Through Hole
Current - Collector Cutoff (Max) :
100nA ICBO
Frequency :
120MHz
Terminal Finish :
Tin/Bismuth (Sn/Bi)
Operating Temperature :
150°C TJ
Lead Free :
Lead Free
Pin Count :
3
Surface Mount :
No
Power Dissipation :
1W
Current - Collector (Ic) (Max) :
5A
Max Collector Current :
5A
Factory Lead Time :
2 Weeks
Number of Pins :
3
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Number of Elements :
1
Collector Emitter Voltage (VCEO) :
500mV
Pbfree Code :
yes
Published :
2012
Radiation Hardening :
No
Polarity/Channel Type :
NPN
Vce Saturation (Max) @ Ib, Ic :
500mV @ 60mA, 3A
Packaging :
Bulk
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Transistor Type :
NPN
hFE Min :
280
ECCN Code :
EAR99
DC Current Gain (hFE) (Min) @ Ic, Vce :
280 @ 500mA 2V
Configuration :
Single
Collector Emitter Breakdown Voltage :
20V
RoHS Status :
ROHS3 Compliant
JESD-609 Code :
e6
Datasheets
2SD1805G-E
Introducing Transistors - Bipolar (BJT) - Single onsemi 2SD1805G-E from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:2SD1805, Mounting Type:Through Hole, Operating Temperature:150°C TJ, Number of Pins:3, Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, 2SD1805G-E pinout, 2SD1805G-E datasheet PDF, 2SD1805G-E amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SD1805G-E ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SD1805G-E


NPN 150°C TJ 100nA ICBO 1 Elements NPN TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole

2SD1805G-E Overview


This device has a DC current gain of 280 @ 500mA 2V, which is the ratio between the collector current and the base current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 6V to achieve high efficiency.The maximum collector current is 5A volts.

2SD1805G-E Features


the DC current gain for this device is 280 @ 500mA 2V
the vce saturation(Max) is 500mV @ 60mA, 3A
the emitter base voltage is kept at 6V


2SD1805G-E Applications


There are a lot of ON Semiconductor
2SD1805G-E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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