2SD1805F-E

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Mfr.Part #
2SD1805F-E
Manufacturer
onsemi
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
TRANS NPN 20V 5A TP
Stock
19,834
In Stock :
19,834

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
ECCN Code :
EAR99
Power Dissipation :
1W
Base Part Number :
2SD1805
Current - Collector (Ic) (Max) :
5A
Mounting Type :
Through Hole
Configuration :
Single
Collector Emitter Voltage (VCEO) :
500mV
Lifecycle Status :
LIFETIME (Last Updated: 1 week ago)
RoHS Status :
RoHS Compliant
DC Current Gain (hFE) (Min) @ Ic, Vce :
160 @ 500mA 2V
Pin Count :
3
Packaging :
Bulk
Polarity/Channel Type :
NPN
Transistor Type :
NPN
Emitter Base Voltage (VEBO) :
6V
Published :
2012
Max Power Dissipation :
1W
Lead Free :
Lead Free
Max Collector Current :
5A
Frequency :
120MHz
JESD-609 Code :
e6
Operating Temperature :
150°C TJ
Number of Elements :
1
hFE Min :
160
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Current - Collector Cutoff (Max) :
100nA ICBO
Surface Mount :
No
Pbfree Code :
yes
Collector Base Voltage (VCBO) :
60V
Vce Saturation (Max) @ Ib, Ic :
500mV @ 60mA, 3A
Terminal Finish :
Tin/Bismuth (Sn/Bi)
Number of Pins :
3
Collector Emitter Breakdown Voltage :
20V
Factory Lead Time :
4 Weeks
Datasheets
2SD1805F-E
Introducing Transistors - Bipolar (BJT) - Single onsemi 2SD1805F-E from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:2SD1805, Mounting Type:Through Hole, Operating Temperature:150°C TJ, Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, Number of Pins:3, 2SD1805F-E pinout, 2SD1805F-E datasheet PDF, 2SD1805F-E amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SD1805F-E ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SD1805F-E


NPN 150°C TJ 100nA ICBO 1 Elements NPN TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole

2SD1805F-E Overview


In this device, the DC current gain is 160 @ 500mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 60mA, 3A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.Maximum collector currents can be below 5A volts.

2SD1805F-E Features


the DC current gain for this device is 160 @ 500mA 2V
the vce saturation(Max) is 500mV @ 60mA, 3A
the emitter base voltage is kept at 6V


2SD1805F-E Applications


There are a lot of ON Semiconductor
2SD1805F-E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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