2SD1802T-E
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- Mfr.Part #
- 2SD1802T-E
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS NPN 50V 5A TP
- Stock
- 847
- In Stock ：
- 847
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Operating Temperature :
- 150°C TJ
- Configuration :
- Single
- Published :
- 2011
- hFE Min :
- 100
- Base Part Number :
- 2SD1802
- Factory Lead Time :
- 2 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 200 @ 100mA 2V
- Surface Mount :
- No
- Max Power Dissipation :
- 1W
- Collector Emitter Voltage (VCEO) :
- 50V
- Vce Saturation (Max) @ Ib, Ic :
- 0.5mV @ 100mA, 2A
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Collector Base Voltage (VCBO) :
- 60V
- JESD-609 Code :
- e6
- Emitter Base Voltage (VEBO) :
- 6V
- Lead Free :
- Lead Free
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Max Collector Current :
- 5A
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Collector Emitter Breakdown Voltage :
- 50V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Packaging :
- Bulk
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mounting Type :
- Through Hole
- Frequency - Transition :
- 150MHz
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- NPN
- ECCN Code :
- EAR99
- Power - Max :
- 1W
- Datasheets
- 2SD1802T-E
NPN 150°C TJ 1μA ICBO NPN TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole
2SD1802T-E Overview
In this device, the DC current gain is 200 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 0.5mV @ 100mA, 2A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.Maximum collector currents can be below 5A volts.
2SD1802T-E Features
the DC current gain for this device is 200 @ 100mA 2V
the vce saturation(Max) is 0.5mV @ 100mA, 2A
the emitter base voltage is kept at 6V
2SD1802T-E Applications
There are a lot of ON Semiconductor
2SD1802T-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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