2SD1802S-TL-E
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- Mfr.Part #
- 2SD1802S-TL-E
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 50V 3A TPFA
- Stock
- 1,592
- In Stock ：
- 1,592
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Frequency :
- 150MHz
- Published :
- 2012
- Collector Emitter Voltage (VCEO) :
- 50V
- JESD-609 Code :
- e6
- Max Collector Current :
- 3A
- Max Power Dissipation :
- 1W
- Collector Base Voltage (VCBO) :
- 60V
- Factory Lead Time :
- 5 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 2A
- Operating Temperature :
- 150°C TJ
- Height :
- 2.3mm
- Collector Emitter Breakdown Voltage :
- 50V
- Mounting Type :
- Surface Mount
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Collector Emitter Saturation Voltage :
- 190μV
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Emitter Base Voltage (VEBO) :
- 6V
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Gain Bandwidth Product :
- 150MHz
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Base Part Number :
- 2SD1802
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 140 @ 100mA 2V
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Pin Count :
- 3
- Max Breakdown Voltage :
- 50V
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Width :
- 5.5mm
- hFE Min :
- 140
- Power Dissipation :
- 1W
- Element Configuration :
- Single
- Length :
- 6.5mm
- Number of Pins :
- 3
- Surface Mount :
- yes
- Datasheets
- 2SD1802S-TL-E
NPN 150°C TJ 1μA ICBO 1 Elements NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SD1802S-TL-E Overview
DC current gain in this device equals 140 @ 100mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 190μV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 100mA, 2A.An emitter's base voltage can be kept at 6V to gain high efficiency.Breakdown input voltage is 50V volts.In extreme cases, the collector current can be as low as 3A volts.
2SD1802S-TL-E Features
the DC current gain for this device is 140 @ 100mA 2V
a collector emitter saturation voltage of 190μV
the vce saturation(Max) is 500mV @ 100mA, 2A
the emitter base voltage is kept at 6V
2SD1802S-TL-E Applications
There are a lot of ON Semiconductor
2SD1802S-TL-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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