2SD1802S-E
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- Mfr.Part #
- 2SD1802S-E
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS NPN 50V 3A TP
- Stock
- 7,923
- In Stock ：
- 7,923
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 1W
- Pbfree Code :
- yes
- JESD-609 Code :
- e6
- Current - Collector (Ic) (Max) :
- 3A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- hFE Min :
- 100
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Lead Free :
- Lead Free
- Max Breakdown Voltage :
- 50V
- Surface Mount :
- No
- Collector Emitter Voltage (VCEO) :
- 50V
- Transistor Type :
- NPN
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Collector Base Voltage (VCBO) :
- 60V
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Factory Lead Time :
- 2 Weeks
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- 2SD1802
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Pins :
- 3
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 2A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 140 @ 100mA 2V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Collector Emitter Breakdown Voltage :
- 50V
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Published :
- 2012
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Packaging :
- Bulk
- Pin Count :
- 3
- Configuration :
- Single
- Max Collector Current :
- 5A
- Frequency - Transition :
- 150MHz
- Datasheets
- 2SD1802S-E
NPN 150°C TJ 1μA ICBO NPN TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole
2SD1802S-E Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 140 @ 100mA 2V.When VCE saturation is 500mV @ 100mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.This device can take an input voltage of 50V volts before it breaks down.A maximum collector current of 5A volts can be achieved.
2SD1802S-E Features
the DC current gain for this device is 140 @ 100mA 2V
the vce saturation(Max) is 500mV @ 100mA, 2A
the emitter base voltage is kept at 6V
2SD1802S-E Applications
There are a lot of ON Semiconductor
2SD1802S-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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