2SD1802S-E
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- Mfr.Part #
- 2SD1802S-E
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS NPN 50V 3A TP
- Stock
- 7,923
- In Stock ：
- 7,923
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Max Breakdown Voltage :
- 50V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 2A
- Mounting Type :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Emitter Voltage (VCEO) :
- 50V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Collector Emitter Breakdown Voltage :
- 50V
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Surface Mount :
- No
- Frequency - Transition :
- 150MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 140 @ 100mA 2V
- Published :
- 2012
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 2 Weeks
- Polarity/Channel Type :
- NPN
- Packaging :
- Bulk
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 60V
- Max Collector Current :
- 5A
- Base Part Number :
- 2SD1802
- JESD-609 Code :
- e6
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- hFE Min :
- 100
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Transistor Type :
- NPN
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Max Power Dissipation :
- 1W
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Configuration :
- Single
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Current - Collector (Ic) (Max) :
- 3A
- Operating Temperature :
- 150°C TJ
- Datasheets
- 2SD1802S-E
NPN 150°C TJ 1μA ICBO NPN TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole
2SD1802S-E Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 140 @ 100mA 2V.When VCE saturation is 500mV @ 100mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.This device can take an input voltage of 50V volts before it breaks down.A maximum collector current of 5A volts can be achieved.
2SD1802S-E Features
the DC current gain for this device is 140 @ 100mA 2V
the vce saturation(Max) is 500mV @ 100mA, 2A
the emitter base voltage is kept at 6V
2SD1802S-E Applications
There are a lot of ON Semiconductor
2SD1802S-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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