2SD1802S-E
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- Mfr.Part #
- 2SD1802S-E
- Manufacturer
- onsemi
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- TRANS NPN 50V 3A TP
- Stock
- 7,923
- In Stock ：
- 7,923
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 60V
- Emitter Base Voltage (VEBO) :
- 6V
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Collector Emitter Breakdown Voltage :
- 50V
- RoHS Status :
- ROHS3 Compliant
- Max Breakdown Voltage :
- 50V
- Frequency - Transition :
- 150MHz
- Transistor Type :
- NPN
- Max Power Dissipation :
- 1W
- Pbfree Code :
- yes
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 140 @ 100mA 2V
- Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 100mA, 2A
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 2 Weeks
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Packaging :
- Bulk
- JESD-609 Code :
- e6
- Current - Collector (Ic) (Max) :
- 3A
- Mounting Type :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 50V
- Surface Mount :
- No
- Base Part Number :
- 2SD1802
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- hFE Min :
- 100
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Max Collector Current :
- 5A
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Operating Temperature :
- 150°C TJ
- Published :
- 2012
- Datasheets
- 2SD1802S-E
NPN 150°C TJ 1μA ICBO NPN TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole
2SD1802S-E Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 140 @ 100mA 2V.When VCE saturation is 500mV @ 100mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.This device can take an input voltage of 50V volts before it breaks down.A maximum collector current of 5A volts can be achieved.
2SD1802S-E Features
the DC current gain for this device is 140 @ 100mA 2V
the vce saturation(Max) is 500mV @ 100mA, 2A
the emitter base voltage is kept at 6V
2SD1802S-E Applications
There are a lot of ON Semiconductor
2SD1802S-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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