2SD1801T-TL-E
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- Mfr.Part #
- 2SD1801T-TL-E
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 50V 2A TP-FA
- Stock
- 10,682
- In Stock ：
- 10,682
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- Frequency - Transition :
- 150MHz
- Power - Max :
- 800mW
- Supplier Device Package :
- 2-TP-FA
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 2V
- Mounting Type :
- Surface Mount
- Transistor Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Current - Collector (Ic) (Max) :
- 2A
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 50mA, 1A
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- 2SD1801T-TL-E
NPN 150°C TJ 100nA ICBO TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SD1801T-TL-E Overview
This device has a DC current gain of 100 @ 100mA 2V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 400mV @ 50mA, 1A means Ic has reached its maximum value(saturated).Product package 2-TP-FA comes from the supplier.Collector Emitter Breakdown occurs at 50VV - Maximum voltage.
2SD1801T-TL-E Features
the DC current gain for this device is 100 @ 100mA 2V
the vce saturation(Max) is 400mV @ 50mA, 1A
the supplier device package of 2-TP-FA
2SD1801T-TL-E Applications
There are a lot of Rochester Electronics, LLC
2SD1801T-TL-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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