2SD1801S-TL-E
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- Mfr.Part #
- 2SD1801S-TL-E
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 50V 2A TPFA
- Stock
- 8,030
- In Stock ：
- 8,030
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Base Part Number :
- 2SD1801
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Surface Mount :
- yes
- Collector Emitter Saturation Voltage :
- 150mV
- Height :
- 2.3mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 50V
- Factory Lead Time :
- 2 Weeks
- Current - Collector (Ic) (Max) :
- 2A
- Collector Emitter Voltage (VCEO) :
- 50V
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Case Connection :
- COLLECTOR
- Published :
- 2004
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 2V
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 150MHz
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 150MHz
- hFE Min :
- 140
- Emitter Base Voltage (VEBO) :
- 6V
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 50mA, 1A
- Max Collector Current :
- 2A
- Max Power Dissipation :
- 800mW
- JESD-30 Code :
- R-PSSO-G2
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Max Frequency :
- 150MHz
- Number of Terminations :
- 2
- Terminal Form :
- Gull wing
- Operating Temperature :
- 150°C TJ
- Width :
- 5.5mm
- Pin Count :
- 3
- Length :
- 6.5mm
- Lifecycle Status :
- ACTIVE (Last Updated: 23 hours ago)
- JESD-609 Code :
- e6
- Collector Base Voltage (VCBO) :
- 60V
- Number of Pins :
- 3
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Datasheets
- 2SD1801S-TL-E
NPN 150°C TJ 100nA ICBO 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SD1801S-TL-E Overview
In this device, the DC current gain is 100 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 150mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 50mA, 1A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.150MHz is present in the transition frequency.Maximum collector currents can be below 2A volts.
2SD1801S-TL-E Features
the DC current gain for this device is 100 @ 100mA 2V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 400mV @ 50mA, 1A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz
2SD1801S-TL-E Applications
There are a lot of ON Semiconductor
2SD1801S-TL-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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