2SD1801S-TL-E
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- Mfr.Part #
- 2SD1801S-TL-E
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 50V 2A TPFA
- Stock
- 8,030
- In Stock ：
- 8,030
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 2 Weeks
- Transistor Type :
- NPN
- Pbfree Code :
- yes
- Transition Frequency :
- 150MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 60V
- JESD-609 Code :
- e6
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 50mA, 1A
- Gain Bandwidth Product :
- 150MHz
- Case Connection :
- COLLECTOR
- Operating Temperature :
- 150°C TJ
- Lead Free :
- Lead Free
- Height :
- 2.3mm
- Published :
- 2004
- Max Power Dissipation :
- 800mW
- hFE Min :
- 140
- Collector Emitter Saturation Voltage :
- 150mV
- Number of Pins :
- 3
- Length :
- 6.5mm
- Base Part Number :
- 2SD1801
- Max Collector Current :
- 2A
- Width :
- 5.5mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 2V
- JESD-30 Code :
- R-PSSO-G2
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin/Bismuth (Sn/Bi)
- Surface Mount :
- yes
- Mounting Type :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 50V
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 6V
- Max Frequency :
- 150MHz
- Number of Terminations :
- 2
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Transistor Application :
- SWITCHING
- Polarity/Channel Type :
- NPN
- Collector Emitter Breakdown Voltage :
- 50V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Lifecycle Status :
- ACTIVE (Last Updated: 23 hours ago)
- Transistor Element Material :
- SILICON
- Current - Collector (Ic) (Max) :
- 2A
- Datasheets
- 2SD1801S-TL-E
NPN 150°C TJ 100nA ICBO 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
2SD1801S-TL-E Overview
In this device, the DC current gain is 100 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 150mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 50mA, 1A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.150MHz is present in the transition frequency.Maximum collector currents can be below 2A volts.
2SD1801S-TL-E Features
the DC current gain for this device is 100 @ 100mA 2V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 400mV @ 50mA, 1A
the emitter base voltage is kept at 6V
a transition frequency of 150MHz
2SD1801S-TL-E Applications
There are a lot of ON Semiconductor
2SD1801S-TL-E applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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