2SD1801S-E

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Mfr.Part #
2SD1801S-E
Manufacturer
onsemi
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
TRANS NPN 50V 2A TP
Stock
1,721
In Stock :
1,721

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Emitter Base Voltage (VEBO) :
6V
Vce Saturation (Max) @ Ib, Ic :
400mV @ 50mA, 1A
Transistor Type :
NPN
Mounting Type :
Through Hole
Published :
2012
Lead Free :
Lead Free
DC Current Gain (hFE) (Min) @ Ic, Vce :
140 @ 100mA 2V
hFE Min :
100
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins :
3
JESD-609 Code :
e6
Terminal Finish :
Tin/Bismuth (Sn/Bi)
ECCN Code :
EAR99
Max Power Dissipation :
800mW
Collector Base Voltage (VCBO) :
60V
Collector Emitter Breakdown Voltage :
50V
Pbfree Code :
yes
Operating Temperature :
150°C TJ
Frequency - Transition :
150MHz
Max Collector Current :
2A
Factory Lead Time :
2 Weeks
Lifecycle Status :
ACTIVE (Last Updated: 3 days ago)
Collector Emitter Voltage (VCEO) :
50V
Current - Collector Cutoff (Max) :
100nA ICBO
Base Part Number :
2SD1801
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power - Max :
800mW
RoHS Status :
ROHS3 Compliant
Packaging :
Bulk
Pin Count :
3
Datasheets
2SD1801S-E
Introducing Transistors - Bipolar (BJT) - Single onsemi 2SD1801S-E from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, Number of Pins:3, Operating Temperature:150°C TJ, Base Part Number:2SD1801, 2SD1801S-E pinout, 2SD1801S-E datasheet PDF, 2SD1801S-E amp .Beyond Transistors - Bipolar (BJT) - Single onsemi 2SD1801S-E ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi 2SD1801S-E


NPN 150°C TJ 100nA ICBO TO-251-3 Short Leads, IPak, TO-251AA Bulk Through Hole

2SD1801S-E Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 140 @ 100mA 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 50mA, 1A.The emitter base voltage can be kept at 6V for high efficiency.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.

2SD1801S-E Features


the DC current gain for this device is 140 @ 100mA 2V
the vce saturation(Max) is 400mV @ 50mA, 1A
the emitter base voltage is kept at 6V


2SD1801S-E Applications


There are a lot of ON Semiconductor
2SD1801S-E applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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