2SD1782KT146R
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- Mfr.Part #
- 2SD1782KT146R
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A SMT3
- Stock
- 70,751
- In Stock ：
- 70,751
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Collector Base Voltage (VCBO) :
- 80V
- HTS Code :
- 8541.21.00.75
- Transistor Type :
- NPN
- Operating Temperature :
- 150°C TJ
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 80V
- Pbfree Code :
- yes
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Terminal Form :
- Gull wing
- JESD-609 Code :
- e1
- Termination :
- SMD/SMT
- Gain Bandwidth Product :
- 120MHz
- Mounting Type :
- Surface Mount
- Base Part Number :
- 2SD1782
- Number of Pins :
- 3
- Transistor Application :
- AMPLIFIER
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- 500mV
- Collector Emitter Voltage (VCEO) :
- 80V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 180 @ 100mA 3V
- Lead Free :
- Lead Free
- Height :
- 1mm
- hFE Min :
- 120
- Collector Emitter Breakdown Voltage :
- 80V
- Continuous Collector Current :
- 500mA
- Number of Terminations :
- 3
- Packaging :
- Tape and Reel (TR)
- Transition Frequency :
- 120MHz
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 5V
- Pin Count :
- 3
- Contact Plating :
- Copper, Silver, Tin
- Number of Elements :
- 1
- Length :
- 2.9mm
- Voltage - Rated DC :
- 80V
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- REACH SVHC :
- No SVHC
- Terminal Position :
- Dual
- Current Rating :
- 500mA
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Max Frequency :
- 100MHz
- Factory Lead Time :
- 13 Weeks
- Width :
- 1.6mm
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 200mW
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation :
- 200mW
- Max Collector Current :
- 500mA
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Radiation Hardening :
- No
- Published :
- 1998
- Datasheets
- 2SD1782KT146R
NPN 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SD1782KT146R Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 180 @ 100mA 3V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 500mA.Single BJT transistor is recommended to keep the continuous collector voltage at 500mA in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 120MHz.The breakdown input voltage is 80V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
2SD1782KT146R Features
the DC current gain for this device is 180 @ 100mA 3V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 120MHz
2SD1782KT146R Applications
There are a lot of ROHM Semiconductor
2SD1782KT146R applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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