2SD1782KT146Q
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- Mfr.Part #
- 2SD1782KT146Q
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Datasheet
- Download
- Description
- TRANS NPN 80V 0.5A SMT3
- Stock
- 50,972
- In Stock ：
- 50,972
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 80V
- Published :
- 1998
- Base Part Number :
- 2SD1782
- Collector Emitter Voltage (VCEO) :
- 80V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- RoHS Status :
- ROHS3 Compliant
- Polarity/Channel Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Mounting Type :
- Surface Mount
- Transition Frequency :
- 120MHz
- Collector Emitter Breakdown Voltage :
- 80V
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Time@Peak Reflow Temperature-Max (s) :
- 10
- hFE Min :
- 120
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 100mA 3V
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Termination :
- SMD/SMT
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Gain Bandwidth Product :
- 120MHz
- Contact Plating :
- Copper, Silver, Tin
- Continuous Collector Current :
- 500mA
- REACH SVHC :
- No SVHC
- Terminal Position :
- Dual
- Transistor Type :
- NPN
- Peak Reflow Temperature (Cel) :
- 260
- Max Collector Current :
- 500mA
- Current Rating :
- 500mA
- Power Dissipation :
- 200mW
- Max Breakdown Voltage :
- 80V
- Radiation Hardening :
- No
- JESD-609 Code :
- e1
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Packaging :
- Tape and Reel (TR)
- Terminal Form :
- Gull wing
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Application :
- AMPLIFIER
- HTS Code :
- 8541.21.00.75
- Element Configuration :
- Single
- Factory Lead Time :
- 13 Weeks
- Voltage - Rated DC :
- 80V
- Max Power Dissipation :
- 200mW
- Pin Count :
- 3
- Datasheets
- 2SD1782KT146Q
NPN 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) Surface Mount
2SD1782KT146Q Overview
This device has a DC current gain of 120 @ 100mA 3V, which is the ratio between the base current and the collector current.A VCE saturation (Max) of 500mV @ 50mA, 500mA means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 500mA to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.This device has a current rating of 500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 120MHz.A breakdown input voltage of 80V volts can be used.A maximum collector current of 500mA volts is possible.
2SD1782KT146Q Features
the DC current gain for this device is 120 @ 100mA 3V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 120MHz
2SD1782KT146Q Applications
There are a lot of ROHM Semiconductor
2SD1782KT146Q applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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