2SD1768STPR
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- Mfr.Part #
- 2SD1768STPR
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-72 Formed Leads
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A SPT
- Stock
- 19,603
- In Stock ：
- 19,603
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e1
- Collector Emitter Breakdown Voltage :
- 80V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Qualification Status :
- Not Qualified
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Operating Temperature :
- 150°C TJ
- Collector Emitter Voltage (VCEO) :
- 400mV
- Peak Reflow Temperature (Cel) :
- 260
- Max Power Dissipation :
- 300mW
- Terminal Finish :
- TIN SILVER COPPER
- Packaging :
- Tape and Reel (TR)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 500mA 3V
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Base Voltage (VCBO) :
- 100V
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Max Collector Current :
- 1A
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 20mA, 500mA
- Transistor Type :
- NPN
- Transistor Element Material :
- SILICON
- Gain Bandwidth Product :
- 100MHz
- Mount :
- Through Hole
- HTS Code :
- 8541.21.00.95
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Current - Collector (Ic) (Max) :
- 1A
- Published :
- 2009
- Transition Frequency :
- 100MHz
- Polarity/Channel Type :
- NPN
- Package / Case :
- SC-72 Formed Leads
- Number of Elements :
- 1
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Pin Count :
- 3
- Datasheets
- 2SD1768STPR
NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN SC-72 Formed Leads Tape & Reel (TR) Through Hole
2SD1768STPR Overview
In this device, the DC current gain is 120 @ 500mA 3V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 20mA, 500mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
2SD1768STPR Features
the DC current gain for this device is 120 @ 500mA 3V
the vce saturation(Max) is 400mV @ 20mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
2SD1768STPR Applications
There are a lot of ROHM Semiconductor
2SD1768STPR applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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