2SD1768STPQ
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- Mfr.Part #
- 2SD1768STPQ
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-72 Formed Leads
- Datasheet
- Download
- Description
- TRANS NPN 80V 1A SPT
- Stock
- 30,224
- In Stock ：
- 30,224
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 100V
- Mount :
- Through Hole
- JESD-30 Code :
- R-PSIP-T3
- Qualification Status :
- Not Qualified
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Pin Count :
- 3
- Max Collector Current :
- 1A
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Through Hole
- Transistor Application :
- SWITCHING
- Operating Temperature :
- 150°C TJ
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 100MHz
- Published :
- 2009
- hFE Min :
- 120
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Emitter Base Voltage (VEBO) :
- 5V
- Current - Collector (Ic) (Max) :
- 1A
- JESD-609 Code :
- e1
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 20mA, 500mA
- Package / Case :
- SC-72 Formed Leads
- Collector Emitter Breakdown Voltage :
- 80V
- Max Power Dissipation :
- 300mW
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 400mV
- Terminal Finish :
- TIN SILVER COPPER
- HTS Code :
- 8541.21.00.95
- Number of Elements :
- 1
- Transition Frequency :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 500mA 3V
- Packaging :
- Tape and Box (TB)
- Datasheets
- 2SD1768STPQ
NPN 150°C TJ 1μA ICBO 1 Elements 3 Terminations SILICON NPN SC-72 Formed Leads Tape & Box (TB) Through Hole
2SD1768STPQ Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 120 @ 500mA 3V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 20mA, 500mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Parts of this part have transition frequencies of 100MHz.During maximum operation, collector current can be as low as 1A volts.
2SD1768STPQ Features
the DC current gain for this device is 120 @ 500mA 3V
the vce saturation(Max) is 400mV @ 20mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
2SD1768STPQ Applications
There are a lot of ROHM Semiconductor
2SD1768STPQ applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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